參數(shù)資料
型號(hào): HY27SF081G2M-TPCB
廠商: HYNIX SEMICONDUCTOR INC
元件分類: DRAM
英文描述: 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory
中文描述: 128M X 8 FLASH 1.8V PROM, 30 ns, PDSO48
封裝: 12 X 20 MM, 1.20 MM HEIGHT, LEAD FREE, TSOP1-48
文件頁(yè)數(shù): 20/48頁(yè)
文件大?。?/td> 476K
代理商: HY27SF081G2M-TPCB
Rev 0.7 / Apr. 2005
20
Preliminary
HY27UF(08/ 16)1G2M Series
HY27SF(08/ 16)1G2M Series
1Gbit (128Mx8bit / 64Mx16bit) NAND Flash
Item
Symbol
Test Condition
Min
Max
Unit
Input / Output Capacitance (1)
C
I/O
V
IL
=0V
-
10
pF
Input Capacitance(1)
C
IN
V
IN
=0V
-
10
pF
Table 11: Pin Capacitance (TA= 25C, F= 1.0MHz)
Note:
1. For the stacked devices version the Input Capacitance is <TBD> and the I/O capacitance is <TBD>
Parameter
Symbol
Min
Typ
Max
Unit
Program Time
t
PROG
-
300
700
us
Dummy Busy Time for Cache Program
t
CBSY
-
3
700
us
Number of partial Program Cycles in the same page
Main Array
NOP
-
-
4
Cycles
Spare Array
NOP
-
-
4
Cycles
Block Erase Time
t
BERS
-
2
3
ms
Table 12: Program / Erase Characteristics
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HY27SF081G2M-TPCP 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory
HY27SF081G2M-TPCS 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory
HY27SF081G2M-TPEB 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory
HY27SF081G2M-TPEP 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory
HY27SF081G2M-TPES 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory