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參數(shù)資料
| 型號(hào)： | HY27SF081G2M-TPCB |
| 廠商： | HYNIX SEMICONDUCTOR INC |
| 元件分類(lèi)： | DRAM |
| 英文描述： | 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory |
| 中文描述： | 128M X 8 FLASH 1.8V PROM, 30 ns, PDSO48 |
| 封裝： | 12 X 20 MM, 1.20 MM HEIGHT, LEAD FREE, TSOP1-48 |
| 文件頁(yè)數(shù)： | 16/48頁(yè) |
| 文件大?。?/td> | 476K |
| 代理商： | HY27SF081G2M-TPCB |
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Rev 0.7 / Apr. 2005
16
Preliminary
HY27UF(08/ 16)1G2M Series
HY27SF(08/ 16)1G2M Series
1Gbit (128Mx8bit / 64Mx16bit) NAND Flash
4. OTHER FEATURES
4.1 Data Protection.
The device is designed to offer protection from any involuntary program/erase during power-transitions. An internal
voltage detector disables all functions whenever Vcc is below about 1.1V(1.8V device), 2V(3.3V device). WP# pin pro-
vides hardware protection and is recommended to be kept at VIL during power-up and power-down. A recovery time
of minimum 10us is required before internal circuit gets ready for any command sequences as shown in Figure 26. The
two-step command sequence for program/erase provides additional software protection.
4.2 Ready/ Busy.
The device has a Ready/Busy output that provides method of indicating the completion of a page program, erase,
copy-back, cache program and random read completion. The RB# pin is normally high and goes to low when the
device is busy (after a reset, read, program, erase operation). It returns to high when the internal controller has fin-
ished the operation. The pin is an open-drain driver thereby allowing two or more RB# outputs to be Or-tied. Because
pull-up resistor value is related to tr(RB#) and current drain during busy (Ibusy), an appropriate value can be obtained
with the following reference chart (Fig.27). Its value can be determined by the following guidance.
4.3 Power-On Auto-Read
The device is designed to offer automatic reading of the first page without command and address input sequence dur-
ing power-on.
An internal voltage detector enables auto-page read functions when Vcc reaches about 1.8V. PRE pin controls activa-
tion of auto- page read function. Auto-page read function is enabled only when PRE pin is logic high state. Serial
access may be done after power-on without latency. Power-On Auto Read mode is available only on 3.3V device
(HY27UF(08/16)1G2M).
相關(guān)PDF資料 |
PDF描述 |
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| HY27SF081G2M-TPCP | 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory |
| HY27SF161G2M-TCP | 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory |
| HY27SF161G2M-TCS | 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory |
| HY27SF161G2M-TEB | 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HY27SF081G2M-TPCP | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory |
| HY27SF081G2M-TPCS | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory |
| HY27SF081G2M-TPEB | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory |
| HY27SF081G2M-TPEP | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory |
| HY27SF081G2M-TPES | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory |
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