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參數(shù)資料
| 型號： | HUFA76504DK8T |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | 2.3A, 80V, 0.222 Ohm, Dual N-Channel, Logic Level UltraFET Power MOSFET |
| 中文描述： | 2500 mA, 80 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, MS-012AA |
| 文件頁數(shù)： | 8/13頁 |
| 文件大?。?/td> | 313K |
| 代理商： | HUFA76504DK8T |
2001 Fairchild Semiconductor Corporation
Rev. A, June 4, 2001
The transient thermal impedance (Z
θ
JA
) is also effected by
varied top copper board area. Figure 24 shows the effect of
copper pad area on single pulse transient thermal
impedance. Each trace represents a copper pad area in
square inches corresponding to the descending list in the
graph. Spice and SABER thermal models are provided for
each of the listed pad areas.
Copper pad area has no perceivable effect on transient
thermal impedance for pulse widths less than 100ms. For
pulse widths less than 100ms the transient thermal
impedance is determined by the die and package. Therefore,
CTHERM1 through CTHERM5 and RTHERM1 through
RTHERM5 remain constant for each of the thermal models. A
listing of the model component values is available in Table 1.
0
40
80
120
160
10
-1
10
0
10
1
10
2
10
3
FIGURE 24. THERMAL RESISTANCE vs MOUNTING PAD AREA
t, RECTANGULAR PULSE DURATION (s)
Z
θ
J
,
I
o
C
COPPER BOARD AREA - DESCENDING ORDER
0.020 in
0.140 in
2
0.257 in
2
0.380 in
2
0.493 in
2
HUFA76504DK8
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| HUFA76504DK8 | 2.3A, 80V, 0.222 Ohm, Dual N-Channel, Logic Level UltraFET Power MOSFET |
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| HUFA76619D3 | 18A, 100V, 0.087 Ohm, N-Channel, Logic Level UltraFET Power MOSFET |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HUFA76609D3 | 功能描述:MOSFET 10a 100V 0.165 Ohm Logic Level N-Ch RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| HUFA76609D3S | 功能描述:MOSFET 10a 100V 0.165 Ohm Logic Level N-Ch RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| HUFA76609D3ST | 功能描述:MOSFET 10a 100V 0.165 Ohm Logic Level N-Ch RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| HUFA76609D3ST_F085 | 功能描述:MOSFET Trans N-CH 100V 10A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| HUFA76609D3ST_NL | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
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