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參數(shù)資料
| 型號： | HUFA76504DK8T |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | 2.3A, 80V, 0.222 Ohm, Dual N-Channel, Logic Level UltraFET Power MOSFET |
| 中文描述： | 2500 mA, 80 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, MS-012AA |
| 文件頁數(shù)： | 4/13頁 |
| 文件大?。?/td> | 313K |
| 代理商： | HUFA76504DK8T |
2001 Fairchild Semiconductor Corporation
Rev. A, June 4, 2001
FIGURE 5. FORWARD BIAS SAFE OPERATING AREA
NOTE: Refer to Application Notes AN9321 and AN9322.
FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING
CAPABILITY
FIGURE 7. TRANSFER CHARACTERISTICS
FIGURE 8. SATURATION CHARACTERISTICS
FIGURE 9. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
FIGURE 10. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
Typical Performance Curves
(Continued)
0.1
1
10
100
1
10
100
200
200
100
μ
s
10ms
1ms
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
I
D
,
DS(ON)
LIMITED BY r
T
J
= MAX RATED
T
A
= 25
C
SINGLE PULSE
R
θ
JA
= 228
o
C/W
1
10
0.01
0.1
1
20
I
A
,
t
AV
, TIME IN AVALANCHE (ms)
STARTING T
J
= 25
o
C
o
C
t
AV
AS
)/( = 150
DSS
- V
DD
)
If R
≠
0
t
AV
= (L/R)ln[(I
AS
*R)/(1.3*RATED BV
DSS
- V
DD
) +1]
IS = (L)(I
STARTING T
J
= 150
o
C
0
2
4
6
8
10
2.5
V
GS
, GATE TO SOURCE VOLTAGE (V)
3.0
3.5
4.0
4.5
2.0
I
D
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
V
DD
= 15V
T
J
= 25
o
C
T
J
= 150
o
C
T
J
= -55
o
C
0
2
4
6
8
10
0
1
2
3
I
D
,
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
V
GS
= 3V
T
A
= 25
o
C
V
GS
= 3.5V
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
V
GS
= 10V
V
GS
= 4.5V
150
200
250
300
350
2
4
6
8
10
I
D
= 1.1A
V
GS
, GATE TO SOURCE VOLTAGE (V)
I
D
= 2.5A
r
D
,
O
)
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
0.5
1.0
1.5
2.0
2.5
-80
-40
0
40
80
120
160
N
T
J
, JUNCTION TEMPERATURE (
o
C)
O
V
GS
= 10V, I
D
= 2.5A
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
HUFA76504DK8
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| HUFA76609D3 | 功能描述:MOSFET 10a 100V 0.165 Ohm Logic Level N-Ch RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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| HUFA76609D3ST | 功能描述:MOSFET 10a 100V 0.165 Ohm Logic Level N-Ch RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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