參數(shù)資料
型號(hào): HUF76413D3
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: 功率晶體管
英文描述: 20A, 60V, 0.056 Ohm, N-Channel, Logic Level UltraFET Power MOSFET
中文描述: 20 A, 60 V, 0.061 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA
文件頁(yè)數(shù): 5/10頁(yè)
文件大?。?/td> 205K
代理商: HUF76413D3
2001 Fairchild Semiconductor Corporation
HUF76413D3, HUF76413D3S Rev. B
FIGURE 11. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
FIGURE 12. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
FIGURE 13. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
NOTE: Refer to Fairchild Application Notes AN7254 and AN7260.
FIGURE 14. GATE CHARGE WAVEFORMS FOR CONSTANT
GATE CURRENT
FIGURE 15. SWITCHING TIME vs GATE RESISTANCE
FIGURE 16. SWITCHING TIME vs GATE RESISTANCE
Typical Performance Curves
(Continued)
0.6
0.8
1.0
1.2
-80
-40
0
40
80
120
160
200
0.4
N
T
J
, JUNCTION TEMPERATURE (
o
C)
V
GS
= V
DS
, I
D
= 250
μ
A
T
1.0
1.1
1.2
-80
-40
0
40
80
120
160
200
0.9
T
J
, JUNCTION TEMPERATURE (
o
C)
N
B
I
D
= 250
μ
A
100
1000
0.1
1
10
60
2000
10
C
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
V
GS
= 0V, f = 1MHz
C
ISS
=
C
GS
+ C
GD
C
OSS
C
DS
+ C
GD
C
RSS
=
C
GD
2
4
6
8
10
0
5
10
15
20
0
V
G
,
V
DD
= 30V
Q
g
, GATE CHARGE (nC)
I
D
= 20A
I
D
= 15A
I
D
= 5A
WAVEFORMS IN
DESCENDING ORDER:
50
100
150
200
250
0
10
20
30
40
50
0
S
R
GS
, GATE TO SOURCE RESISTANCE (
)
V
GS
= 4.5V, V
DD
= 30V, I
D
= 15A
t
r
t
f
t
d(ON)
t
d(OFF)
25
50
75
100
125
0
10
20
30
40
50
0
S
R
GS
, GATE TO SOURCE RESISTANCE (
)
V
GS
= 10V, V
DD
= 30V, I
D
= 20A
t
d(OFF)
t
r
t
d(ON)
t
f
HUF76413D3, HUF76413D3S
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