- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄384447 > HUF76413D3 (FAIRCHILD SEMICONDUCTOR CORP) 20A, 60V, 0.056 Ohm, N-Channel, Logic Level UltraFET Power MOSFET PDF資料下載
參數(shù)資料
| 型號： | HUF76413D3 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | 20A, 60V, 0.056 Ohm, N-Channel, Logic Level UltraFET Power MOSFET |
| 中文描述： | 20 A, 60 V, 0.061 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA |
| 文件頁數(shù)： | 4/10頁 |
| 文件大?。?/td> | 205K |
| 代理商： | HUF76413D3 |
2001 Fairchild Semiconductor Corporation
HUF76413D3, HUF76413D3S Rev. B
FIGURE 5. FORWARD BIAS SAFE OPERATING AREA
NOTE: Refer to Fairchild Application Notes AN9321 and AN9322.
FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING
CAPABILITY
FIGURE 7. TRANSFER CHARACTERISTICS
FIGURE 8. SATURATION CHARACTERISTICS
FIGURE 9. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
FIGURE 10. NORMALIZED
DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
Typical Performance Curves
(Continued)
10
100
1
10
100
1
200
200
100
μ
s
10ms
1ms
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
I
D
,
LIMITED BY r
DS(ON)
AREA MAY BE
T
J
= MAX RATED
T
C
= 25
o
C
SINGLE PULSE
10
100
0.001
0.01
t
AV
, TIME IN AVALANCHE (ms)
0.1
1
10
1
I
A
,
STARTING T
J
= 25
o
C
STARTING T
J
= 150
o
C
t
AV
= (L)(I
AS
)/(1.3*RATED BV
DSS
- V
DD
)
If R
≠
0
t
AV
= (L/R)ln[(I
AS
*R)/(1.3*RATED BV
DSS
- V
DD
) +1]
If R = 0
10
20
30
40
1.5
2.0
2.5
3.0
3.5
4.0
4.5
0
I
D
V
GS
, GATE TO SOURCE VOLTAGE (V)
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
V
DD
= 15V
T
J
= 175
o
C
T
J
= 25
o
C
T
J
= -55
o
C
10
20
30
40
0
1
2
3
4
0
I
D
,
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
V
GS
= 3V
V
GS
= 3.5V
V
GS
= 5V
V
GS
= 10V
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
T
C
= 25
o
C
V
GS
= 4V
45
60
75
90
2
4
6
8
10
30
I
D
= 5A
V
GS
, GATE TO SOURCE VOLTAGE (V)
I
D
= 20A
r
D
,
O
)
I
D
= 15A
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
T
C
= 25
C
1.0
1.5
2.0
2.5
-80
-40
0
40
80
120
160
200
0.5
N
T
J
, JUNCTION TEMPERATURE (
o
C)
O
V
GS
= 10V, I
D
= 20A
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
HUF76413D3, HUF76413D3S
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HUF76413D3S | RESISTOR NTWK-330 OHM,2% 8SIP,7RES SER,L |
| HUF76413P3 | 22A, 60V, 0.056 Ohm, N-Channel, Logic Level UltraFET Power MOSFET(22A, 60V, 0.056Ω N溝道邏輯電平功率MOS場效應管) |
| HUF76419D3 | 20A, 60V, 0.043 Ohm, N-Channel, Logic Level UltraFET Power MOSFET |
| HUF76419D3S | 20A, 60V, 0.043 Ohm, N-Channel, Logic Level UltraFET Power MOSFET |
| HUF76419S3S | 27A, 60V, 0.040 Ohm, N-Channel, Logic Level UltraFET Power MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HUF76413D3S | 功能描述:MOSFET TO-252 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| HUF76413D3ST | 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| HUF76413D3T | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 20A I(D) | TO-251AA |
| HUF76413P3 | 功能描述:MOSFET TO-220 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| HUF76413S3S | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 23A I(D) | TO-263AB |
發(fā)布緊急采購，3分鐘左右您將得到回復。