參數(shù)資料
型號： HUF75939P3
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： 功率晶體管
英文描述： 22A, 200V, 0.125 Ohm, N-Channel, UltraFET Power MOSFET
中文描述： 22 A, 200 V, 0.125 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
文件頁數(shù)： 7/10頁
文件大?。?/td> 195K
代理商： HUF75939P3
2001 Fairchild Semiconductor Corporation
HUF75939P3, HUF75939S3ST Rev. B
PSPICE Electrical Model
.SUBCKT HUF75939 2 1 3 ;
rev 10 October 2000
CA 12 8 3.6e-9
CB 15 14 3.5e-9
CIN 6 8 2e-9
DBODY 7 5 DBODYMOD
DBREAK 5 11 DBREAKMOD
DPLCAP 10 5 DPLCAPMOD
EBREAK 11 7 17 18 225
EDS 14 8 5 8 1
EGS 13 8 6 8 1
ESG 6 10 6 8 1
EVTHRES 6 21 19 8 1
EVTEMP 20 6 18 22 1
IT 8 17 1
LDRAIN 2 5 1e-9
LGATE 1 9 5.78e-9
LSOURCE 3 7 3.92e-9
MMED 16 6 8 8 MMEDMOD
MSTRO 16 6 8 8 MSTROMOD
MWEAK 16 21 8 8 MWEAKMOD
RBREAK 17 18 RBREAKMOD 1
RDRAIN 50 16 RDRAINMOD 83.5e-3
RGATE 9 20 7.6e-1
RLDRAIN 2 5 10
RLGATE 1 9 57.8
RLSOURCE 3 7 39.2
RSLC1 5 51 RSLCMOD 1e-6
RSLC2 5 50 1e3
RSOURCE 8 7 RSOURCEMOD 10e-3
RVTHRES 22 8 RVTHRESMOD 1
RVTEMP 18 19 RVTEMPMOD 1
S1A 6 12 13 8 S1AMOD
S1B 13 12 13 8 S1BMOD
S2A 6 15 14 13 S2AMOD
S2B 13 15 14 13 S2BMOD
VBAT 22 19 DC 1
ESLC 51 50 VALUE={(V(5,51)/ABS(V(5,51)))*(PWR(V(5,51)/(1e-6*38),2.5))}
.MODEL DBODYMOD D (IS = 1.2e-12 RS = 5.5e-3 XTI = 5.5 TRS1 = 1e-5 TRS2 = 8e-6 + CJO = 12.5e-10 TT = 1e-7 M = 0.42)
.MODEL DBREAKMOD D (RS = 2. 5TRS1 = 1e- 3TRS2 = -8.9e-6)
.MODEL DPLCAPMOD D (CJO = 2.5e- 9IS = 1e-3 0N = 10 M = 0.9)
.MODEL MMEDMOD NMOS (VTO = 3.14 KP = 5 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u RG = 7.6e-1)
.MODEL MSTROMOD NMOS (VTO = 3.68 KP = 100 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u)
.MODEL MWEAKMOD NMOS (VTO = 2.76 KP = 0.05 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u RG = 7.6 RS = 0.1)
.MODEL RBREAKMOD RES (TC1 =1.52e- 3TC2 = -2e-7)
.MODEL RDRAINMOD RES (TC1 = 9.8e-3 TC2 = 2.6e-5)
.MODEL RSLCMOD RES (TC1 = 3e-3 TC2 = 1e-6)
.MODEL RSOURCEMOD RES (TC1 = 1e-3 TC2 = 1e-6)
.MODEL RVTHRESMOD RES (TC1 = -2.3e-3 TC2 = -1.3e-5)
.MODEL RVTEMPMOD RES (TC1 = -2.8e- 3TC2 = 1.7e-6)
.MODEL S1AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -8.5 VOFF= -1)
.MODEL S1BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -1 VOFF= -8.5)
.MODEL S2AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -0.1 VOFF= 0.2)
.MODEL S2BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = 0.2 VOFF= -0.1)
.ENDS
NOTE: For further discussion of the PSPICE model, consult
A New PSPICE Sub-Circuit for the Power MOSFET Featuring Global
Temperature Options
; IEEE Power Electronics Specialist Conference Records, 1991, written by William J. Hepp and C. Frank Wheatley.
18
22
+
-
6
8
+
-
5
51
+
-
19
8
+
-
17
18
-
6
8
+
-
5
8
+
-
RBREAK
RVTEMP
VBAT
RVTHRES
IT
17
18
19
22
12
13
15
S1A
S1B
S2A
S2B
CA
CB
EGS
EDS
14
8
13
8
14
13
MWEAK
EBREAK
DBODY
RSOURCE
SOURCE
3
11
7
LSOURCE
RLSOURCE
CIN
RDRAIN
EVTHRES
16
21
8
MMED
MSTRO
DRAIN
2
LDRAIN
RLDRAIN
DBREAK
DPLCAP
ESLC
RSLC1
51
10
5
50
RSLC2
1
GATE
RGATE
EVTEMP
9
ESG
LGATE
RLGATE
20
+
-
+
6
HUF75939P3, HUF75939S3ST
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HUF75939P3_F102 制造商:Fairchild Semiconductor Corporation 功能描述:
HUF75939S3ST 功能描述:MOSFET TO-263 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
HUF75945G3 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
HUF75945P3 功能描述:MOSFET TO-220 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
HUF75945S3ST 功能描述:MOSFET TO-263 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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