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參數(shù)資料
| 型號： | HUF75939P3 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | 22A, 200V, 0.125 Ohm, N-Channel, UltraFET Power MOSFET |
| 中文描述： | 22 A, 200 V, 0.125 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 文件頁數(shù)： | 1/10頁 |
| 文件大?。?/td> | 195K |
| 代理商： | HUF75939P3 |
2001 Fairchild Semiconductor Corporation
HUF75939P3, HUF75939S3ST Rev. B
HUF75939P3, HUF75939S3ST
22A, 200V, 0.125 Ohm, N-Channel,
UltraFET Power MOSFET
Packaging
JEDEC TO-220AB
Symbol
Features
Ultra Low On-Resistance
r
DS(ON)
= 0.125
,
V
GS
= 10V
Simulation Models
- Temperature Compensated PSPICE and SABER
Electrical Models
- Spice and SABER Thermal Impedance Models
www.fairchildsemi.com
Peak Current vs Pulse Width Curve
UIS Rating Curve
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
JEDEC TO-263AB
DRAIN
(FLANGE)
GATE
SOURDRAIN
HUF75939P3
GATE
SOURCE
DRAIN
(FLANGE)
HUF75939S3ST
D
G
S
Ordering Information
PART NUMBER
PACKAGE
BRAND
HUF75939P3
TO-220AB
75939P
HUF75939S3ST
TO-263AB
75939S
NOTE: When ordering, use the entire part number.
HUF75939P3, HUF75939S3ST
UNITS
Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DSS
Drain to Gate Voltage (R
GS
= 20k
) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DGR
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GS
Drain Current
Continuous (T
C
= 25
o
C, V
GS
= 10V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
Continuous (T
C
= 100
o
C, V
GS
= 10V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
DM
Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . UIS
200
V
200
V
±
20
V
22
16
Figure 4
A
A
Figures 6, 14, 15
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
Derate Above 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
180
1.2
W
W/
o
C
o
C
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
J
, T
STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
L
Package Body for 10s, See Tech Brief TB334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
pkg
NOTE:
1. T
J
= 25
o
C to 150
o
C.
CAUTION:
Stresses above those listed in
“
Absolute Maximum Ratings
”
may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
-55 to 175
300
260
o
C
o
C
Data Sheet
December 2001
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PDF描述 |
|---|---|
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| HUF75945P3 | 38A, 200V, 0.071 Ohm, N-Channel, UltraFET Power MOSFETs |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HUF75939P3_F102 | 制造商:Fairchild Semiconductor Corporation 功能描述: |
| HUF75939S3ST | 功能描述:MOSFET TO-263 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| HUF75945G3 | 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| HUF75945P3 | 功能描述:MOSFET TO-220 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| HUF75945S3ST | 功能描述:MOSFET TO-263 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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