參數(shù)資料
型號: HUF75852G3
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: 功率晶體管
英文描述: 75A, 150V, 0.016 Ohm, N-Channel, UltraFET Power MOSFET
中文描述: 75 A, 150 V, 0.016 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247
文件頁數(shù): 3/10頁
文件大小: 193K
代理商: HUF75852G3
2001 Fairchild Semiconductor Corporation
HUF75852G3 Rev. B
Typical Performance Curves
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
FIGURE 4. PEAK CURRENT CAPABILIT Y
T
C
, CASE TEMPERATURE (
o
C)
P
0
0
25
50
75
100
175
0.2
0.4
0.6
0.8
1.0
1.2
125
150
20
40
60
80
50
75
100
125
150
0
25
I
D
,
T
C
, CASE TEMPERATURE (
o
C)
V
GS
= 10V
175
0.1
1
2
10
-4
10
-3
10
-2
10
-1
10
0
10
1
0.01
10
-5
t, RECTANGULAR PULSE DURATION (s)
Z
θ
J
,
T
SINGLE PULSE
NOTES:
DUTY FACTOR: D = t
1
/t
2
PEAK T
J
= P
DM
x Z
θ
JC
x R
θ
JC
+ T
C
P
DM
t
1
t
2
DUTY CYCLE - DESCENDING ORDER
0.5
0.2
0.1
0.05
0.02
0.01
100
2000
50
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
-5
I
D
,
t, PULSE WIDTH (s)
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
T
C
= 25
o
C
FOR TEMPERATURES
ABOVE 25
o
C DERATE PEAK
CURRENT AS FOLLOWS:
I = I
25
175 - T
C
150
1000
V
GS
= 10V
HUF75852G3
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