參數(shù)資料
型號: HUF75617D3S
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: 功率晶體管
英文描述: 16A, 100V, 0.090 Ohm, N-Channel, UltraFET Power MOSFETs
中文描述: 16 A, 100 V, 0.09 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
文件頁數(shù): 7/10頁
文件大?。?/td> 197K
代理商: HUF75617D3S
2001 Fairchild Semiconductor Corporation
HUF75617D3 Rev. B
PSPICE Electrical Model
.SUBCKT HUF75617d3 2 1 3 ;
rev 24May 2000
CA 12 8 9.9e-10
CB 15 14 1.0e-9
CIN 6 8 5.4e-10
DBODY 7 5 DBODYMOD
DBREAK 5 11 DBREAKMOD
DPLCAP 10 5 DPLCAPMOD
EBREAK 11 7 17 18 117.8
EDS 14 8 5 8 1
EGS 13 8 6 8 1
ESG 6 10 6 8 1
EVTHRES 6 21 19 8 1
EVTEMP 20 6 18 22 1
IT 8 17 1
LDRAIN 2 5 1.0e-9
LGATE 1 9 5.24e-9
LSOURCE 3 7 4.25e-9
MMED 16 6 8 8 MMEDMOD
MSTRO 16 6 8 8 MSTROMOD
MWEAK 16 21 8 8 MWEAKMOD
RBREAK 17 18 RBREAKMOD 1
RDRAIN 50 16 RDRAINMOD 3.9e-2
RGATE 9 20 2.45
RLDRAIN 2 5 10
RLGATE 1 9 52.4
RLSOURCE 3 7 42.5
RSLC1 5 51 RSLCMOD 1e-6
RSLC2 5 50 1e3
RSOURCE 8 7 RSOURCEMOD 3.2e-2
RVTHRES 22 8 RVTHRESMOD 1
RVTEMP 18 19 RVTEMPMOD 1
S1A 6 12 13 8 S1AMOD
S1B 13 12 13 8 S1BMOD
S2A 6 15 14 13 S2AMOD
S2B 13 15 14 13 S2BMOD
VBAT 22 19 DC 1
ESLC 51 50 VALUE={(V(5,51)/ABS(V(5,51)))*(PWR(V(5,51)/(1e-6*32),3.5))}
.MODEL DBODYMOD D (IS = 6.0e-13 RS = 11.0e-3 XTI = 4.5 TRS1 = 1.1e-3 TRS2 = 7.1e-6 CJO = 6.5e-10 TT = 4.1e-8 M = 0.54)
.MODEL DBREAKMOD D (RS = 5.6e- 1TRS1 = 8.0e- 4TRS2 = 3.0e-6)
.MODEL DPLCAPMOD D (CJO = 7.0e-1 0IS = 1e-3 0M = 0.89 N = 10)
.MODEL MMEDMOD NMOS (VTO = 3.10 KP = 3 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u RG = 2.45)
.MODEL MSTROMOD NMOS (VTO = 3.64 KP = 42 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u)
.MODEL MWEAKMOD NMOS (VTO = 2.68 KP = 0.02 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u RG = 24.5)
.MODEL RBREAKMOD RES (TC1 = 1.05e- 3TC2 = -5.0e-7)
.MODEL RDRAINMOD RES (TC1 = 1.20e-2 TC2 = 3.00e-5)
.MODEL RSLCMOD RES (TC1 = 3.2e-3 TC2 = 1.0e-6)
.MODEL RSOURCEMOD RES (TC1 = 1e-3 TC2 = 1e-6)
.MODEL RVTHRESMOD RES (TC1 = -2.2e-3 TC2 = -9.0e-6)
.MODEL RVTEMPMOD RES (TC1 = -2.4e- 3TC2 = -1.8e-6)
.MODEL S1AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -5.9 VOFF= -3.1)
.MODEL S1BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -3.1 VOFF= -5.9)
.MODEL S2AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -0.6 VOFF= 0.5)
.MODEL S2BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = 0.5 VOFF= -0.6)
.ENDS
NOTE: For further discussion of the PSPICE model, consult
A New PSPICE Sub-Circuit for the Power MOSFET Featuring Global
Temperature Options
; IEEE Power Electronics Specialist Conference Records, 1991, written by William J. Hepp and C. Frank Wheatley.
18
22
+
-
6
8
+
-
5
51
+
-
19
8
+
-
17
18
-
6
8
+
-
5
8
+
-
RBREAK
RVTEMP
VBAT
RVTHRES
IT
17
18
19
22
12
13
15
S1A
S1B
S2A
S2B
CA
CB
EGS
EDS
14
8
13
8
14
13
MWEAK
EBREAK
DBODY
RSOURCE
SOURCE
3
11
7
LSOURCE
RLSOURCE
CIN
RDRAIN
EVTHRES
16
21
8
MMED
MSTRO
DRAIN
2
LDRAIN
RLDRAIN
DBREAK
DPLCAP
ESLC
RSLC1
51
10
5
50
RSLC2
1
GATE
RGATE
EVTEMP
9
ESG
LGATE
RLGATE
20
+
-
+
6
HUF75617D3
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HUF75623P3 功能描述:MOSFET 22a 100V N-Ch UltraFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
HUF75623S3 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:22A, 100V, 0.064 Ohm, N-Channel, UltraFET Power MOSFETs
HUF75623S35T 制造商:Intersil Corporation 功能描述:
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