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參數(shù)資料
| 型號(hào)： | HUF75617D3 |
| 廠商： | INTERSIL CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | 16A, 100V, 0.090 Ohm, N-Channel,UltraFET Power MOSFETs(16A, 100V, 0.090 Ω,N溝道超快功率MOS場(chǎng)效應(yīng)管) |
| 中文描述： | 16 A, 100 V, 0.09 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA |
| 文件頁(yè)數(shù)： | 11/11頁(yè) |
| 文件大小： | 240K |
| 代理商： | HUF75617D3 |
11
All Intersil semiconductor products are manufactured, assembled and tested under
ISO9000
quality systems certification.
Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with-
out notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site
www.intersil.com
Sales Office Headquarters
NORTH AMERICA
Intersil Corporation
P. O. Box 883, Mail Stop 53-204
Melbourne, FL 32902
TEL: (321) 724-7000
FAX: (321) 724-7240
TEL: (32) 2.724.2111
FAX: (32) 2.724.22.05
EUROPE
Intersil SA
Mercure Center
100, Rue de la Fusee
1130 Brussels, Belgium
ASIA
Intersil Ltd.
8F-2, 96, Sec. 1, Chien-kuo North,
Taipei, Taiwan 104
Republic of China
TEL: 886-2-2515-8508
FAX: 886-2-2515-8369
HUF75617D3
TO-251AA
3 LEAD JEDEC TO-251AA PLASTIC PACKAGE
b
2
E
A
c
SEATING
PLANE
L
1
D
L
b
e
1
2
3
b
1
H
1
J
1
A
1
e
1
TERM. 4
SYMBOL
A
A
1
b
b
1
b
2
c
D
E
e
e
1
H
1
J
1
L
L
1
NOTES:
1. These dimensions are within allowable dimensions of Rev. C of
JEDEC TO-251AA outline dated 9-88.
2. Solder finish uncontrolled in this area.
3. Dimension (without solder).
4. Add typically 0.002 inches (0.05mm) for solder plating.
5. Position of lead to be measured 0.250 inches (6.35mm) from bot-
tom of dimension D.
6. Position of lead to be measured 0.100 inches (2.54mm) from bot-
tom of dimension D.
7. Controlling dimension: Inch.
8. Revision 4dated 5-00.
INCHES
MIN
0.086
0.018
0.028
0.033
0.205
0.018
0.270
0.250
0.090 TYP
0.180 BSC
0.035
0.040
0.355
0.075
MILLIMETERS
MIN
2.19
0.46
0.72
0.84
5.21
0.46
6.86
6.35
2.28 TYP
4.57 BSC
0.89
1.02
9.02
1.91
NOTES
-
3, 4
3, 4
3
3, 4
3, 4
-
-
5
5
-
6
-
2
MAX
0.094
0.023
0.033
0.045
0.215
0.023
0.295
0.265
MAX
2.38
0.58
0.84
1.14
5.46
0.58
7.49
6.73
0.050
0.045
0.375
0.090
1.27
1.14
9.52
2.28
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HUF75617D3S | 16A, 100V, 0.090 Ohm, N-Channel,UltraFET Power MOSFETs(16A, 100V, 0.090 Ω,N溝道超快功率MOS場(chǎng)效應(yīng)管) |
| HUF75617D3 | 16A, 100V, 0.090 Ohm, N-Channel, UltraFET Power MOSFETs |
| HUF75617D3S | 16A, 100V, 0.090 Ohm, N-Channel, UltraFET Power MOSFETs |
| HUF75617D3ST | TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 16A I(D) | TO-252AA |
| HUF75623P3 | 22A, 100V, 0.064 Ohm, N-Channel, UltraFET Power MOSFETs |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HUF75617D3S | 功能描述:MOSFET 16a 100V N-Ch 0.090Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| HUF75617D3ST | 功能描述:MOSFET 16a 100V N-Ch 0.090Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| HUF75623P3 | 功能描述:MOSFET 22a 100V N-Ch UltraFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| HUF75623S3 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:22A, 100V, 0.064 Ohm, N-Channel, UltraFET Power MOSFETs |
| HUF75623S35T | 制造商:Intersil Corporation 功能描述: |
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