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參數(shù)資料
| 型號： | HUF75332P3 |
| 廠商： | INTERSIL CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | 60A, 55V, 0.019 Ohm, N-Channel UltraFET Power MOSFETs(60A, 55V, 0.019 Ω,N溝道,UltraFET功率MOS場效應(yīng)管) |
| 中文描述： | 60 A, 55 V, 0.019 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 文件頁數(shù)： | 9/18頁 |
| 文件大?。?/td> | 210K |
| 代理商： | HUF75332P3 |
102
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SPICE Thermal Model
REV 11February 1999
HUF75332
CTHERM1 th 6 4.00e-3
CTHERM2 6 5 7.00e-3
CTHERM3 5 4 7.50e-3
CTHERM4 4 3 8.00e-3
CTHERM5 3 2 1.85e-2
CTHERM6 2 tl 12.55
RTHERM1 th 6 7.09e-3
RTHERM2 6 5 1.77e-2
RTHERM3 5 4 4.97e-2
RTHERM4 4 3 2.79e-1
RTHERM5 3 2 4.21e-1
RTHERM6 2 tl 5.58e-2
SABER Thermal Model
SABER thermal model HUF75332
template thermal_model th tl
thermal_c th, tl
{
ctherm.ctherm1 th 6 = 4.00e-3
ctherm.ctherm2 6 5 = 7.00e-3
ctherm.ctherm3 5 4 = 7.50e-3
ctherm.ctherm4 4 3 = 8.00e-3
ctherm.ctherm5 3 2 = 1.85e-2
ctherm.ctherm6 2 tl = 12.55
rtherm.rtherm1 th 6 = 7.09e-3
rtherm.rtherm2 6 5 = 1.77e-2
rtherm.rtherm3 5 4 = 4.97e-2
rtherm.rtherm4 4 3 = 2.79e-1
rtherm.rtherm5 3 2 = 4.21e-1
rtherm.rtherm6 2 tl = 5.58e-2
}
RTHERM4
RTHERM6
RTHERM5
RTHERM3
RTHERM2
RTHERM1
CTHERM4
CTHERM6
CTHERM5
CTHERM3
CTHERM2
CTHERM1
tl
2
3
4
5
6
th
JUNCTION
CASE
HUF75332G3, HUF75332P3, HUF75332S3S
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HUF75332G3 | 60A, 55V, 0.019 Ohm, N-Channel UltraFET Power MOSFETs(60A, 55V, 0.019 Ω,N溝道,UltraFET功率MOS場效應(yīng)管) |
| HUF75332S3S | 60A, 55V, 0.019 Ohm, N-Channel UltraFET Power MOSFETs(60A, 55V, 0.019 Ω,N溝道,UltraFET功率MOS場效應(yīng)管) |
| HUF75337P3 | 75A, 55V, 0.014 Ohm, N-Channel UltraFET Power MOSFETs |
| HUF75337S3S | 75A, 55V, 0.014 Ohm, N-Channel UltraFET Power MOSFETs |
| HUF75337G3 | TRANSISTOR 45V PNP SMD SOT-23 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HUF75332P3_NL | 制造商:Fairchild Semiconductor Corporation 功能描述: |
| HUF75332S3 | 功能描述:MOSFET DISC BY MFG 2/02 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| HUF75332S3S | 功能描述:MOSFET DISC BY MFG 2/02 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| HUF75332S3ST | 功能描述:MOSFET 60a 55V 0.019 Ohm Logic Level N-Ch RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| HUF75333G3 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:66A, 55V, 0.016 Ohm. N-Channel UltraFET Power MOSFETs |
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