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參數(shù)資料
| 型號(hào)： | HUF75332S3S |
| 廠商： | INTERSIL CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | 60A, 55V, 0.019 Ohm, N-Channel UltraFET Power MOSFETs(60A, 55V, 0.019 Ω,N溝道,UltraFET功率MOS場(chǎng)效應(yīng)管) |
| 中文描述： | 60 A, 55 V, 0.019 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| 文件頁(yè)數(shù)： | 1/18頁(yè) |
| 文件大小： | 210K |
| 代理商： | HUF75332S3S |
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CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
UltraFET is a trademark of Intersil Corporation. PSPICE is a registered trademark of MicroSim Corporation.
SABER
is a Copyright of Analogy, Inc. http://www.intersil.com or 407-727-9207
|
Copyright
Intersil Corporation 1999
HUF75332G3, HUF75332P3, HUF75332S3S
60A, 55V 0.019 Ohm, N-Channel UltraFET
Power MOSFETs
These N-Channel power MOSFETs
are manufactured using the
innovative UltraFET process.
This advanced process technology
achieves the lowest possible on-resistance per silicon area,
resulting in outstanding performance. This device is capable
of withstanding high energy in the avalanche mode and the
diode exhibits very low reverse recovery time and stored
charge. It was designed for use in applications where power
efficiency is important, such as switching regulators,
switching converters, motor drivers, relay drivers, low-
voltage bus switches, and power management in portable
and battery-operated products.
Formerly developmental type TA75332.
Features
60A, 55V
Simulation Models
- Temperature Compensated PSPICE
and SABER
Models
- SPICE and SABER Thermal Impedance Models
Available on the WEB at: www.intersil.com
Peak Current vs Pulse Width Curve
UIS Rating Curve
Related Literature
- TB334, “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
Packaging
Ordering Information
PART NUMBER
PACKAGE
BRAND
HUF75332G3
TO-247
75332G
HUF75332P3
TO-220AB
75332P
HUF75332S3S
TO-263AB
75332S
NOTE: When ordering, use the entire part number. Add the suffix T to
obtain the TO-263AB variant in tape and reel, e.g., HUF75332S3ST.
D
G
S
JEDEC STYLE TO-247
JEDEC TO-220AB
JEDEC TO-263AB
SOURCE
DRAIN
GATE
DRAIN
(TAB)
GATE
SDRAIN
DRAIN
(FLANGE)
GATE
SOURCE
DRAIN
(FLANGE)
Data Sheet
June 1999
File Number
4489.3
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HUF75332S3ST | 功能描述:MOSFET 60a 55V 0.019 Ohm Logic Level N-Ch RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| HUF75333G3 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:66A, 55V, 0.016 Ohm. N-Channel UltraFET Power MOSFETs |
| HUF75333P3 | 功能描述:MOSFET TO-220 N-CH 55V 66A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| HUF75333P3 | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N TO-220 |
| HUF75333P3_NS2552 | 制造商:Fairchild Semiconductor Corporation 功能描述: |
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