參數(shù)資料
型號： HUF75332G3
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： 功率晶體管
英文描述： 60A, 55V, 0.019 Ohm, N-Channel UltraFET Power MOSFETs
中文描述： 60 A, 55 V, 0.019 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247
文件頁數(shù)： 5/10頁
文件大小： 228K
代理商： HUF75332G3
2001 Fairchild Semiconductor Corporation
HUF75332G3, HUF75332P3, HUF75332S3S Rev. B
FIGURE 9. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
FIGURE 10. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
FIGURE 11. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
FIGURE 12. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
NOTE: Refer to Fairchild Application Notes AN7254 and AN7260.
FIGURE 13. GATE CHARGE WAVEFORMS FOR CONSTANT GATE CURRENT
Typical Performance Curves
(Continued)
1.0
1.5
2.0
2.5
-40
0
40
80
120
160
200
0.5
-80
N
T
J
, JUNCTION TEMPERATURE (
o
C)
O
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
V
GS
= 10V, I
D
= 60A
0.8
1.0
1.2
-40
0
40
80
120
160
200
0.6
-80
N
T
J
, JUNCTION TEMPERATURE (
o
C)
T
V
GS
= V
DS
, I
D
= 250
μ
A
1.0
1.1
1.2
-40
0
40
80
120
160
200
0.9
-80
T
J
, JUNCTION TEMPERATURE (
o
C)
N
I
D
= 250
μ
A
B
0
500
1000
1500
2000
0
10
20
30
40
50
60
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
C
C
ISS
C
OSS
C
RSS
V
GS
= 0V, f = 1MHz
C
ISS
= C
GS
+ C
GD
C
RSS
= C
GD
C
OSS
≈
C
DS
+ C
GD
2
4
6
8
10
10
20
30
40
50
60
0
0
V
G
,
V
DD
= 30V
Q
g
, GATE CHARGE (nC)
I
D
= 60A
I
D
= 45A
I
D
= 30A
I
D
= 15A
WAVEFORMS IN
DESCENDING ORDER:
HUF75332G3, HUF75332P3, HUF75332S3S
相關(guān)PDF資料
PDF描述
HUF75332P3 60A, 55V, 0.019 Ohm, N-Channel UltraFET Power MOSFETs
HUF75332S3S 60A, 55V, 0.019 Ohm, N-Channel UltraFET Power MOSFETs
HUF75332P3 60A, 55V, 0.019 Ohm, N-Channel UltraFET Power MOSFETs(60A, 55V, 0.019 Ω,N溝道,UltraFET功率MOS場效應(yīng)管)
HUF75332G3 60A, 55V, 0.019 Ohm, N-Channel UltraFET Power MOSFETs(60A, 55V, 0.019 Ω,N溝道,UltraFET功率MOS場效應(yīng)管)
HUF75332S3S 60A, 55V, 0.019 Ohm, N-Channel UltraFET Power MOSFETs(60A, 55V, 0.019 Ω,N溝道,UltraFET功率MOS場效應(yīng)管)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HUF75332G3_05 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:60A, 55V, 0.019 Ohm, N-Channel UltraFET Power MOSFETs
HUF75332P3 功能描述:MOSFET 60a 55V 0.019 Ohm Logic Level N-Ch RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
HUF75332P3_NL 制造商:Fairchild Semiconductor Corporation 功能描述:
HUF75332S3 功能描述:MOSFET DISC BY MFG 2/02 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
HUF75332S3S 功能描述:MOSFET DISC BY MFG 2/02 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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