參數(shù)資料
型號(hào): HUF75309T3ST
廠商: INTERSIL CORP
元件分類: JFETs
英文描述: 3A, 55V, 0.070 Ohm, N-Channel UltraFET Power MOSFET
中文描述: 3 A, 55 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET
文件頁(yè)數(shù): 4/8頁(yè)
文件大?。?/td> 88K
代理商: HUF75309T3ST
26
NOTE: Refer to Intersil Application Notes AN9321 and AN9322.
FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING CAPABILITY
FIGURE 7. SATURATION CHARACTERISTICS
FIGURE 8. TRANSFER CHARACTERISTICS
FIGURE 9. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
FIGURE 10. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
FIGURE 11. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
Typical Performance Curves
(Continued)
1
10
0.01
0.1
t
AV
, TIME IN AVALANCHE (ms)
1
10
100
20
I
A
,
= (L)(I
AS
)/(1.3*RATED BV
DSS
- V
DD
)
If R
t
AV
= 0
AS
*R)/(1.3*RATED BV
DSS
- V
DD
) +1]
t
STARTING T
J
= 25
o
C
STARTING T
J
= 150
o
C
0
5
10
15
20
25
0
1
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
2
3
4
5
V
GS
= 10V
V
GS
= 20V
I
D
,
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
T
A
= 25
C
V
GS
= 5V
V
GS
= 8V
V
GS
= 6V
V
GS
= 7V
0
5
10
15
20
25
0
1.5
V
GS
, GATE TO SOURCE VOLTAGE (V)
3.0
4.5
6.0
7.5
I
D
D
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
V
DD
= 15V
25
o
C
-55
o
C
150
o
C
0.5
1.0
1.5
2.0
-80
-40
0
40
80
120
160
N
T
J
, JUNCTION TEMPERATURE (
o
C)
O
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
V
GS
= 10V, I
D
= 3A
0.4
0.6
0.8
1.0
1.2
-80
-40
0
40
80
120
160
N
T
J
, JUNCTION TEMPERATURE (
o
C)
T
V
GS
= V
DS
, I
D
= 250
μ
A
0.8
0.9
1.0
1.1
1.2
-80
-40
0
40
80
120
160
B
T
J
, JUNCTION TEMPERATURE (
o
C)
N
I
D
= 250
μ
A
HUF75309T3ST
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