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參數(shù)資料
| 型號： | HT1MOA2S30 |
| 廠商： | NXP Semiconductors N.V. |
| 元件分類： | 通信及網(wǎng)絡(luò) |
| 英文描述： | HITAG 1 transponder IC |
| 封裝： | HT1ICS3002W/V6F<Uncased die|<<<1<Always Pb-free,;HT1ICS3002W/V6F<Uncased die|<<<1<Always Pb-free,;HT1MOA2S30/E/3<SOT500|<<<1<Always Pb-free,; |
| 文件頁數(shù)： | 4/9頁 |
| 文件大?。?/td> | 75K |
| 代理商： | HT1MOA2S30 |
HT1X_SDS
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2011. All rights reserved.
Product short data sheet
COMPANY PUBLIC
Rev. 3.0 — 16 September 2011
210530
4 of 9
NXP Semiconductors
HT1x
HITAG 1 transponder IC
7.
Functional description
7.1 Memory map
The 2 kbit memory area of the HITAG 1 transponder IC is divided into 16 blocks. Each
block comprises 4 pages with 4 bytes (1 byte = 8 bits) each. A page is the smallest access
unit.
Addressing is done pagewise (page 0 to 63) whereas access is gained either pagewise or
blockwise by entering the respective start address.
Block access is only available for blocks 2 to 15, page access is available for pages 0 to
63.
Areas (or settings) with light dark background can be configured by the customer within
the Configuration Page (page 1 of block 0).
Fig 2.
Memory map
aaa-000324
read only
read/write
write only
one time programmable
neither read nor write
Serial Number
Configuration
ro
r/w or ro
Logdata 1B
Logdata 0A
Logdata 1A
Logdata 0B
Key A
Key B
Block 1
Block 4
Block 7
Block 8
Block 15
user data
user data
user data
Block 0
Configuration of the memory is
done in the configuration page
secret
secret
or
public
public
public
r/w
or
OTP
r/w
or
0
wo or 0
r/w
secret
ro
r/w
wo
OTP
0
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| HT1MOA2S30/E/3,118 | 功能描述:RFID應(yīng)答器 HITAG 1 MOA2 MODULE RoHS:否 制造商:Murata 存儲容量:512 bit 工作溫度范圍:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| HT1MOA3S30 | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:HITAGTM1 Chip Module |
| HT1MOA3S30/E/1 | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:HITAGTM1 Chip Module |
| HT1MOA3S30/E/3 | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:HITAGTM1 Chip Module |
| HT1TA | 功能描述:兩極晶體管 - BJT - RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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