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參數(shù)資料
| 型號： | HSK110 |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 18K |
| 代理商： | HSK110 |
Features
Low forward resistance. (r
f
= 0.9
max)
LLD package is suitable for high density surface
mounting and high speed assembly.
Ordering Information
Type No.Cathode band 2nd.band Package code
HSK110 White
Blue
LLD
Outline
1. Cathode
2. Anode
1
2
Cathode band
2nd. band
1
2
Cathode band
2nd. band
ADE-208-170A(Z)
Rev. 1
Jun. 1994
HSK110
Silicon Epitaxial Planar Diode
for UHF/VHF tuner Band Switch
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Value
Unit
Reverse voltage
V
R
I
F
Topr
Tstg
35
V
Forward current
100
mA
Operation temperature
-20 to + 60
°C
Storage temperature
-55 to +125
°C
Electrical Characteristics
(Ta = 25°C)
Item
Symbol Min
Typ
Max
Unit
Test Condition
Forward voltage
V
F
V
R
I
R
C
0.65
—
1.05
V
I
F
= 1 mA
I
R
= 1 μA
V
R
= 25 V
V
R
= 6 V , f = 1 MHz
I
F
= 2 mA , f = 100 MHz
Reverse voltage
35
—
—
V
Reverse current
—
—
0.1
μA
Capacitance
—
—
1.2
pF
Forward resistance
r
f
—
—
0.9
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HSK110 | Silicon Epitaxial Planar Diode for Tuner Band Switch(用于調(diào)諧開關(guān)的平面外延PIN二極管) |
| HSK120 | Silicon Epitaxial Planar Diode for High Speed Switching |
| HSK122 | Silicon Epitaxial Planar Diode for High Voltage Switching |
| HSK277 | |
| HSK277 | Silicon Epitaxial Planar Diode for Tuner Band Switch(用于調(diào)諧開關(guān)的平面外延PIN二極管) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HSK1118 | 制造商:HSMC 制造商全稱:HSMC 功能描述:Silicon N Channel MOS Type |
| HSK120 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon Epitaxial Planar Diode for High Speed Switching |
| HSK120(TR-S-E) | 制造商:Renesas Electronics Corporation 功能描述: |
| HSK120-E | 制造商:Renesas Electronics Corporation 功能描述:HSK120-E |
| HSK122 | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon Epitaxial Planar Diode for High Voltage Switching |
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