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參數(shù)資料
| 型號(hào)： | HN58V1001P-25 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | 1M EEPROM (128-kword x 8-bit) Ready/Busy and RES function |
| 中文描述： | 100萬的EEPROM（128 KWord的× 8位）就緒/忙和RES功能 |
| 文件頁數(shù)： | 17/22頁 |
| 文件大?。?/td> | 119K |
| 代理商： | HN58V1001P-25 |
HN58V1001 Series
17
2. Data Protection at V
CC
On/Off
When V
CC
is turned on or off, noise on the control pins generated by external circuits (CPU, etc) may act as a
trigger and turn the EEPROM to program mode by mistake. To prevent this unintentional programming, the
EEPROM must be kept in an unprogrammable state while the CPU is in an unstable state.
Note:
The EEPROM should be kept in unprogrammable state during V
CC
on/off by using CPU RESET
signal.
V
CC
CPU
RESET
Unprogrammable
Unprogrammable
*
*
(1) Protection by
RES
The unprogrammable state can be realized by that the CPU’s reset signal inputs directly to the EEPROM’s
RES
pin.
RES
should be kept V
SS
level during V
CC
on/off.
The EEPROM brakes off programming operation when
RES
becomes low, programming operation doesn’t
finish correctly in case that
RES
falls low during programming operation.
RES
should be kept high for 15 ms
after the last data input.
V
CC
RES
WE
or
CE
100
μ
s min
15 ms min
1
μ
s min
Program inhibit
Program inhibit
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HN58V1001FP-25 | 1M EEPROM (128-kword x 8-bit) Ready/Busy and RES function |
| HN58V1001T-25 | 5015 RR 3#8 SKT RECP |
| HN58V1001 | 1M EEPROM (128-kword ×8-bit)(1M EEPROM (128k字 ×8位)) |
| HN58V256AI | 256 k EEPROM (32-kword ×8-bit)(256k EEPROM (32k字 ×8位)) |
| HN58V256A | 256k EEPROM (32-kword x 8-bit) Ready/Busy and RES function (HN58V257A) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HN58V1001R-20 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 EEPROM |
| HN58V1001R-25 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 EEPROM |
| HN58V1001SERIES | 制造商:未知廠家 制造商全稱:未知廠家 功能描述: |
| HN58V1001T-20 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 EEPROM |
| HN58V1001T-25 | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:1M EEPROM (128-kword × 8-bit) Ready/Busy and RES function |
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