參數(shù)資料
型號: HN58V1001P-25
廠商: Hitachi,Ltd.
英文描述: 1M EEPROM (128-kword x 8-bit) Ready/Busy and RES function
中文描述: 100萬的EEPROM(128 KWord的× 8位)就緒/忙和RES功能
文件頁數(shù): 16/22頁
文件大?。?/td> 119K
代理商: HN58V1001P-25
HN58V1001 Series
16
Write/Erase Endurance and Data Retention Time
The endurance is 10
4
cycles in case of the page programming and 10
3
cycles in case of the byte programming
(1% cumulative failure rate). The data retention time is more than 10 years when a device is page-
programmed less than 10
4
cycles.
Data Protection
1. Data Protection against Noise on Control Pins (
CE
,
OE
,
WE
) during Operation
During readout or standby, noise on the control pins may act as a trigger and turn the EEPROM to
programming mode by mistake.
To prevent this phenomenon, this device has a noise cancellation function that cuts noise if its width is 20 ns
or less in program mode.
Be careful not to allow noise of a width of more than 20 ns on the control pins.
WE
CE
OE
V
0 V
V
0 V
20 ns max
IH
IH
相關PDF資料
PDF描述
HN58V1001FP-25 1M EEPROM (128-kword x 8-bit) Ready/Busy and RES function
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相關代理商/技術參數(shù)
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HN58V1001T-25 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:1M EEPROM (128-kword × 8-bit) Ready/Busy and RES function