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參數(shù)資料
| 型號： | HN4D01JU |
| 廠商： | Toshiba Corporation |
| 英文描述： | Ultra High Speed Switching Applications |
| 中文描述： | 超高速開關(guān)應(yīng)用 |
| 文件頁數(shù)： | 1/3頁 |
| 文件大小： | 206K |
| 代理商： | HN4D01JU |
HN4D01JU
2007-11-01
1
TOSHIBA Diode Silicon Epitaxial Planar Type
HN4D01JU
Ultra High Speed Switching Applications
z
Low forward voltage
z
Fast reverse recovery time : t
rr
= 1.6ns (typ.)
z
Small total capacitance
Absolute Maximum Ratings
(Ta = 25°C)
: V
F (3)
= 0.92V (typ.)
: C
T
= 2.2pF (typ.)
Characteristic
Symbol
Rating
Unit
Maximum (peak) reverse voltage
Reverse voltage
Maximum (peak) forward current
Average forward current
Surge current (10ms)
Power dissipation
Junction temperature
Storage temperature
V
RM
V
R
I
FM
I
O
I
FSM
P
T
j
T
stg
85
80
300*
100*
2*
200**
150
55
～
150
V
V
mA
mA
A
mW
°C
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba
Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate,
etc).
*: Unit rating. Total rating = unit rating × 1.5
** :Total rating
Electrical Characteristics
(Ta = 25°C)
Characteristic
Symbol
Test
Circuit
―
―
―
―
―
Test Condition
Min
Typ.
Max
Unit
V
F
(1)
V
F
(2)
V
F
(3)
I
R
(1)
I
R
(2)
I
F
= 1mA
―
―
―
―
―
0.61
―
―
I
F
= 10mA
0.74
Forward voltage
I
F
= 100mA
0.92
1.20
V
V
R
= 30V
―
―
0.1
Reverse current
V
R
= 80V
0.5
μ
A
Total capacitance
C
T
―
V
R
= 0, f = 1MHz
―
2.2
―
pF
Reverse recovery time
t
rr
―
I
F
= 10mA, Fig.1
―
1.6
―
ns
Fig.1 Reverse Recovery Time (t
rr
) Test Circuit
JEDEC
―
EIAJ
―
―
TOSHIBA
Weight: 0.0062g(typ.)
Unit: mm
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參數(shù)描述 |
|---|---|
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