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HN4G01J
2007-11-01
1
TOSHIBA Multi Chip Discrece Device
HN4G01J
Audio Frequency General Purpose Amplifier Applications
Q1
z
Small package (Dual type)
z
High voltage and high current
: V
CEO
= 50V, I
C
= 150mA (max)
z
High h
FE
: h
FE
= 120~400
z
Excellent h
FE
linearity
: h
FE
(I
C
= 0.1mA) / h
FE
(I
C
= 2mA) = 0.95 (typ.)
Q2
z
Incorporating a bias resistor into a transistor reduces parts count.
Reducing the parts count enable the manufacture of ever more
compact equipment and save assembly cost.
Q1 : 2SC4837F
Q2 : RN1103F
Q1 Absolute Maximum Ratings
(Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Collector-base voltage
V
CBO
60
V
Collector-emitter voltage
V
CEO
50
V
Emitter-base voltage
V
EBO
5
V
Collector current
I
C
150
mA
Base current
Q2 Absolute Maximum Ratings
(Ta = 25°C)
I
B
30
mA
Characteristic
Symbol
Rating
Unit
Collector-base voltage
V
CBO
50
V
Collector-emitter voltage
V
CEO
50
V
Emitter-base voltage
V
EBO
10
V
Collector current
Absolute Maximum Ratings
(Ta = 25°C) (Q1,Q2Common)
I
C
100
mA
Characteristic
Symbol
Rating
Unit
Collector power dissipation
P
C
*
300
mW
Junction temperature
T
j
150
°
C
Storage temperature range
T
stg
55~150
°
C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
* Total rating.
1.BASE1
2.EMITTER
3.BASE2
4.COLLECTOR2
5.COLLECTOR1
(B1)
(E)
(B2)
(C2)
(C1)
JEDEC
JEITA
TOSHIBA
Weight: 0.014g(Typ.)
―
―
2-3L1A
Unit: mm