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參數(shù)資料
| 型號(hào)： | HN2S02JE |
| 廠商： | Toshiba Corporation |
| 英文描述： | High-speed Switching Applications |
| 中文描述： | 高速開(kāi)關(guān)應(yīng)用 |
| 文件頁(yè)數(shù)： | 1/3頁(yè) |
| 文件大?。?/td> | 183K |
| 代理商： | HN2S02JE |
HN2S02JE
2007-11-01
1
TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
HN2S02JE
High-speed Switching Applications
z
HN2S02JE is composed of two independent diodes.
z
Low forward voltage: V
F (3)
= 0.54V (typ.)
z
Low reverse current: I
R
= 5
μ
A (max.)
Absolute Maximum Ratings
(Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Maximum (peak) reverse Voltage
V
RM
45
V
Reverse voltage
V
R
40
V
Maximum (peak) forward current
I
FM
300 *
mA
Average forward current
I
O
100 *
mA
Surge current (10ms)
I
FSM
1 *
A
Power dissipation
P
100 **
mW
Junction temperature
T
j
125
°
C
Storage temperature range
T
stg
55
～
125
°
C
Operating temperature range
T
opr
40
～
100
°
C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are
within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
* : Unit rating (Total rating = unit rating × 1.5)
** :Total rating
Electrical Characteristics
(Q1, Q2, Q3 Common, Ta = 25°C)
Characteristic
Symbol
Test
Circuit
Test Condition
Min
Typ.
Max
Unit
V
F
(1)
―
I
F
= 1mA
―
0.28
―
V
F
(2)
―
I
F
= 10mA
―
0.36
―
Forward voltage
V
F
(3)
―
I
F
= 100mA
―
0.54
0.60
V
Reverse current
I
R
―
V
R
= 40V
―
―
5
μ
A
Total capacitance
C
T
―
V
R
= 0, f = 1MH
z
―
18
―
pF
Pin Assignment
(Top View)
Marking
1.ANODE1
2.NC
3.ANODE2
4.CATHODE2
5.CATHODE1
JEDEC
JEITA
TOSHIBA
Weight: 0.003g (Typ.)
―
―
1-2W1B
Unit: mm
A9
1
2
3
4
5
Q1
Q2
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HN2S03FE | High Speed Switching Applications |
| HN2S03FU | High Speed Switching Application |
| HN2S03T | High Speed Switching Application |
| HN2S05FU | High-Speed Switching Applications |
| HN2V02HA | ARRAY OF INDEPENDENT DIODES|SO |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HN2S02JE(TE85L,F) | 制造商:Toshiba America Electronic Components 功能描述:DIODE SCHOTTKY 40V 100MA ESV |
| HN2S03FE | 制造商:TOSHIBA 制造商全稱(chēng):Toshiba Semiconductor 功能描述:High Speed Switching Applications |
| HN2S03FE(TE85L,F) | 制造商:Toshiba America Electronic Components 功能描述:DIODE SCHOTTKY 20V 50MA ES6 |
| HN2S03FU | 制造商:TOSHIBA 制造商全稱(chēng):Toshiba Semiconductor 功能描述:High Speed Switching Application |
| HN2S03FU(TE85L,F) | 制造商:Toshiba America Electronic Components 功能描述:SBD Diode,Vr=20V,Io=0.05A,US6 |
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