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參數(shù)資料
| 型號： | HN2S03FE |
| 廠商： | Toshiba Corporation |
| 英文描述： | High Speed Switching Applications |
| 中文描述： | 高速開關(guān)應(yīng)用 |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 182K |
| 代理商： | HN2S03FE |
HN2S03FE
2007-11-01
1
TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
HN2S03FE
High Speed Switching Applications
z
HN2S03FE is composed of 3 independent diodes.
z
Low forward voltage
z
Low reverse current
z
Small total capacitance
Absolute Maximum Ratings
(Ta = 25°C)
: V
F
(3)
= 0.50V (typ.)
: I
R
= 0.5
μ
A (max)
: C
T
= 3.9pF (typ.)
Characteristic
Symbol
Rating
Unit
Maximum (peak) reverse Voltage
V
RM
25
V
Reverse voltage
V
R
20
V
Maximum (peak) forward current
I
FM
100 *
mA
Average forward current
I
O
50 *
mA
Surge current (10ms)
I
FSM
1 *
A
Power dissipation
P
100 **
mW
Junction temperature
T
j
125
°
C
Storage temperature range
T
stg
55
～
125
°
C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
* : This is the absolute maximum rating for a single diode (Q1, Q2 or Q3).
If two or three diodes are used, the absolute maximum rating
per diode is 75
%
that of the single diode.
** :Total rating
Electrical Characteristics
(Q1, Q2, Q3 Common, Ta = 25°C)
Characteristic
Symbol
Test
Circuit
Test Condition
Min
Typ.
Max
Unit
V
F
(1)
―
I
F
= 1mA
―
0.33
―
V
F
(2)
―
I
F
= 5mA
―
0.38
―
Forward voltage
V
F
(3)
―
I
F
= 50mA
―
0.50
0.55
V
Reverse current
I
R
―
V
R
= 20V
―
―
0.5
μ
A
Total capacitance
C
T
―
V
R
= 0, f = 1MH
z
―
3.9
―
pF
1.ANODE(A1)
2.ANODE(A2)
3.ANODE(A3)
4.CATHODE(C3)
5.CATHODE(C2)
6.CATHODE(C1)
JEDEC
JEITA
TOSHIBA
Weight: 0.003g (Typ.)
―
―
1-2X1C
Unit: mm
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HN2S03FU | High Speed Switching Application |
| HN2S03T | High Speed Switching Application |
| HN2S05FU | High-Speed Switching Applications |
| HN2V02HA | ARRAY OF INDEPENDENT DIODES|SO |
| HN2V02HB | ARRAY OF INDEPENDENT DIODES|SO |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HN2S03FE(TE85L,F) | 制造商:Toshiba America Electronic Components 功能描述:DIODE SCHOTTKY 20V 50MA ES6 |
| HN2S03FU | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:High Speed Switching Application |
| HN2S03FU(TE85L,F) | 制造商:Toshiba America Electronic Components 功能描述:SBD Diode,Vr=20V,Io=0.05A,US6 |
| HN2S03FUTE85LF | 制造商:Toshiba America Electronic Components 功能描述:DIODE SCHOTTKY 20V 50MA US6 |
| HN2S03T | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:High Speed Switching Application |
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