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參數(shù)資料
| 型號(hào)： | HN29WT800T-12 |
| 英文描述： | x8/x16 Flash EEPROM |
| 中文描述： | x8/x16閃存EEPROM |
| 文件頁數(shù)： | 36/43頁 |
| 文件大?。?/td> | 321K |
| 代理商： | HN29WT800T-12 |
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HN29W12811BP Series
36
Function Description
Status Register:
The HN29W12811 outputs the operation status data as follows: I/O7 pin outputs a V
OL
to
indicate that the memory is in either erase or program operation. The level of I/O7 pin turns to a V
OH
when
the operation finishes. I/O5 and I/O4 pins output V
OL
s to indicate that the erase and program operations
complete in a finite time, respectively. If these pins output V
OH
s, it indicates that these operations have timed
out. When these pins monitor, I/O7 pin must turn to a V
OH
. To execute other erase and program operation,
the status data must be cleared after a time out occurs. From I/O0 to I/O3 pins are reserved for future use.
The pins output V
OL
s and should be masked out during the status data read mode. The function of the status
register is summarized in the following table
.
I/O
Flag definition
Ready/
Busy
Definition
I/O7
V
OH
= Ready, V
OL
= Busy
Outputs a V
OL
and should be masked out during the status data poling mode.
V
OH
= Fail, V
OL
= Pass
V
OH
= Fail, V
OL
= Pass
Outputs a V
OL
and should be masked out during the status data poling mode.
I/O6
Reserved
I/O5
Erase check
I/O4
Program check
I/O3
Reserved
I/O2
Reserved
I/O1
Reserved
I/O0
Reserved
Requirement for System
Specifications
Item
Min
Typ
Max
Unit
Usable sectors (initially)
8,029
—
8,192
sector
Spare sectors
145
—
—
sector
ECC (Error Correction Code)
1
—
—
bit/sector
Program/Erase endurance
—
—
3
×
10
5
cycle
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HN29WT800T-8 | x8/x16 Flash EEPROM |
| HN2A01FUGR | TRANSISTOR | BJT | PAIR | PNP | 50V V(BR)CEO | 150MA I(C) | TSOP |
| HN2A01FUY | TRANSISTOR | BJT | PAIR | PNP | 50V V(BR)CEO | 150MA I(C) | TSOP |
| HN2A01FU | PNP EPITAXIAL TYPE (AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS) |
| HN2A26FS | Frequency General-Purpose Amplifier Applications |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HN29WT800T-8 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:1048576-word x 8-bit / 524288-word x 16-bit CMOS Flash Memory |
| HN2A01FE | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Audio Frequency General Purpose Amplifier Applications |
| HN2A01FE-GR(TE85LF | 制造商:Toshiba America Electronic Components 功能描述:TRAN DUAL PNP -50V -0.15A ES6 |
| HN2A01FE-Y(TE85L,F | 制造商:Toshiba America Electronic Components 功能描述:TRAN DUAL PNP -50V -0.15A ES6 |
| HN2A01FU | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:PNP EPITAXIAL TYPE (AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS) |
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