參數(shù)資料
型號(hào): HN29W6411ATT-50
英文描述: EEPROM|AND FLASH|8448KX8|CMOS|TSOP|48PIN|PLASTIC
中文描述: EEPROM的|和FLASH | 8448KX8 |的CMOS |的TSOP | 48PIN |塑料
文件頁(yè)數(shù): 23/43頁(yè)
文件大?。?/td> 321K
代理商: HN29W6411ATT-50
HN29W12811BP Series
23
Timing Waveforms
Power on and off Sequence
t
VRS
t
RP
t
CES
t
BSY
t
CEH
t
CESR
t
RP
t
BSY
t
CES
t
CEH
t
VRH
t
DFP
t
CWRH
t
CESR
t
CWRS
V
CC
CE
WE
RES
RDY
/
Busy
*
1
*
2
*
1
High-Z
Ready
Notes: 1.
RES
must be kept at the V
ILR
level referred to DC characteristics at the rising and falling edges of V
CC
to guarantee data stored in the chip.
2.
RES
must be kept at the V
IHR
level referred to DC characteristics while I/O7 outputs the V
OL
level in the
status data polling and RDY/
Busy
outputs the V
OL
level.
3. : Undefined
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