參數(shù)資料
型號(hào)： HN1B01FDW1T1
英文描述： TRANSISTOR | BJT | PAIR | COMPLEMENTARY | 50V V(BR)CEO | 200MA I(C) | SC-74
中文描述： 晶體管|晶體管|一對(duì)|互補(bǔ)| 50V五（巴西）總裁| 200mA的一（c）|律師- 74
文件頁數(shù)： 3/8頁
文件大?。?/td> 70K
代理商： HN1B01FDW1T1
HN1B01FDW1T1
http://onsemi.com
3
Typical Electrical Characteristics: PNP Transistor
Figure 1. Collector Saturation Region
0
–1
–2
–3
–4
–6
–5
–200
0
–40
I
C
,
V
CE
, COLLECTOR–EMITTER VOLTAGE (V)
–80
–120
–160
Figure 2. DC Current Gain
–1
–10
–100
–1000
1000
10
h
F
,
I
C
, COLLECTOR CURRENT (mA)
100
T
A
= 25
°
C
–2.0 mA
–1.5 mA
–1.0 mA
–0.5 mA
I
B
= –0.2 mA
V
CE
= –1.0 V
T
A
= 100
°
C
–25
°
C
25
°
C
Figure 3. DC Current Gain
–1
–10
–1000
–100
1000
10
h
F
,
I
C
, COLLECTOR CURRENT (mA)
100
Figure 4. V
CE(sat)
versus I
C
–1
–10
–100
–1000
–1
–0.01
V
C
,
I
C
, COLLECTOR CURRENT (mA)
–0.1
I
C
/I
B
= 10
T
A
= 100
°
C
–25
°
C
25
°
C
T
A
= 100
°
C
–25
°
C
25
°
C
Figure 5. V
BE(sat)
versus I
C
–1
–10
–1000
–100
–10
–0.1
B
V
I
C
, COLLECTOR CURRENT (mA)
–1
Figure 6. Base–Emitter Voltage
0
–0.1
–10,000
I
B
,
V
BE
, BASE–EMITTER VOLTAGE (V)
–0.1
COMMON EMITTER
V
CE
= 6 V
T
A
= 100
°
C
–25
°
C
25
°
C
T
A
= 25
°
C
I
C
/I
B
= 10
–1
–10
–100
–1000
–0.2 –0.3 –0.4 –0.5 –0.6 –0.7 –0.8 –0.9
–1
V
CE
= –6.0 V
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HN1B01FDW1T1/D 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Complementary Dual General Purpose Amplifier Transistor
HN1B01FDW1T1G 功能描述:兩極晶體管 - BJT 200mA 60V Dual Complementary RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
HN1B01FGR 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PAIR | COMPLEMENTARY | 50V V(BR)CEO | 150MA I(C) | TSOP
HN1B01F-GR(TE85L,F 制造商:Toshiba America Electronic Components 功能描述:Transistor NPN/PNP Dual 50V 0.15A hfe200
HN1B01FU 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:NPN EPITAXIAL TYPE (AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS)
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