參數(shù)資料
型號： HN1B04FUGR
英文描述： TRANSISTOR | BJT | PAIR | COMPLEMENTARY | 50V V(BR)CEO | 150MA I(C) | TSOP
中文描述： 晶體管|晶體管|一對|互補(bǔ)| 50V五（巴西）總裁| 150毫安一（c）|的TSOP
文件頁數(shù)： 1/8頁
文件大小： 70K
代理商： HN1B04FUGR
Semiconductor Components Industries, LLC, 2002
March, 2002 – Rev. 0
Publication Order Number:
HN1B01FDW1T1/D
HN1B01FDW1T1
Complementary Dual
General Purpose
Amplifier Transistor
PNP and NPN Surface Mount
High Voltage and High Current: V
CEO
= 50 V, I
C
= 200 mA
High h
FE
: h
FE
= 200
400
Moisture Sensitivity Level: 1
ESD Rating – Human Body Model: 3A
ESD Rating
– Machine Model: C
MAXIMUM RATINGS
(T
A
= 25
°
C)
Rating
Symbol
Value
Unit
Collector–Base Voltage
V
(BR)CBO
60
Vdc
Collector–Emitter Voltage
V
(BR)CEO
50
Vdc
Emitter–Base Voltage
V
(BR)EBO
7.0
Vdc
Collector Current – Continuous
I
C
200
mAdc
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Power Dissipation
P
D
380
mW
Junction Temperature
T
J
150
°
C
Storage Temperature
T
stg
–55 to +150
°
C
http://onsemi.com
SC–74
CASE 318F
STYLE 3
MARKING DIAGRAM
123
R9 M
R9
M
= Specific Device Code
= Date Code
Device
Package
Shipping
ORDERING INFORMATION
HN1B01FDW1T1
SC–74
3000/Tape & Reel
The “T1” suffix refers to a 7 inch reel.
Q
1
(4)
(5)
(6)
(1)
(2)
(3)
Q
2
654
相關(guān)PDF資料
PDF描述
HN1B04FUY TRANSISTOR | BJT | PAIR | COMPLEMENTARY | 50V V(BR)CEO | 150MA I(C) | TSOP
HN1B01FU NPN EPITAXIAL TYPE (AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS)
HN1B01F NPN EPITAXIAL TYPE (AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS)
HN1B04FE Audio Frequency General Purpose Amplifier Applications
HN1B04FU NPN EPITAXIAL TYPE (AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HN1B04FU-GR 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Audio Frequency General Purpose Amplifier Applications Driver Stage Amplifier Applications Switching application
HN1B04FU-GR(5LSI,F 制造商:Toshiba America Electronic Components 功能描述:
HN1B04FU-GR(L,F,T) 功能描述:兩極晶體管 - BJT VCEO 50V IC 150mA HFE 120 - 400 150mA RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
HN1B04FU-GR(T5R,F) 制造商:Toshiba 功能描述:Trans GP BJT NPN/PNP 50V 0.15A 6-Pin US T/R
HN1B04FU-GR(TE85LF 制造商:Toshiba America Electronic Components 功能描述:
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