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參數(shù)資料
| 型號(hào)： | HMMC-5620 |
| 元件分類： | 放大器 |
| 英文描述： | 6000 MHz - 20000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |
| 封裝： | 0.0555 X 0.0397 INCH, DIE |
| 文件頁(yè)數(shù)： | 3/8頁(yè) |
| 文件大?。?/td> | 178K |
| 代理商： | HMMC-5620 |
3
Applications
The HMMC-5620 amplifier is de-
signed for use as a general pur-
pose wideband, high gain stage
in communication systems and
microwave instrumentation. It
is ideally suited for broadband
applications requiring high gain
and excellent port matches over
a 6 to 20 GHz frequency range.
Both RF input and output ports
are AC-coupled on chip.
Biasing and Operation
This amplifier is biased with a
single positive drain supply
(VDD). The recommended bias
for the HMMC-5620 is VDD =
5.0V, which results in IDD = 100
mA (Typ.). No other bias sup-
plies or connections to the de-
vice are required for 6 to 20 GHz
operation. See Figure 3 for as-
sembly information.
Assembly Techniques
For RF bonds, Agilent recom-
mends low inductance mesh in-
terconnections for best return
loss performance.
GaAs MMICs are ESD sensitive.
ESD preventive measures must
be employed in all aspects of
storage, handling, and assem-
bly.
MMIC ESD precautions, han-
dling considerations, die attach
and bonding methods are criti-
cal factors in successful GaAs
MMIC performance and reliabil-
ity.
Agilent application note #54,
"GaAs MMIC ESD, Die Attach
and Bonding Guidelines" pro-
vides basic information on these
subjects.
RF Input
GND
FEEDBACK
NTWK
FEEDBACK
NTWK
FEEDBACK
NTWK
GND
FEEDBACK
NTWK
Matching
RF Output
Drain Bias
Figure 1.
Schematic
Matching
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