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參數(shù)資料
| 型號(hào)： | HMMC-5618 |
| 廠商： | AGILENT TECHNOLOGIES INC |
| 元件分類： | 放大器 |
| 英文描述： | 6000 MHz - 20000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |
| 封裝： | 0.0362 X 0.0362 INCH, 0.0056 INCH HEIGHT, DIE |
| 文件頁(yè)數(shù)： | 3/8頁(yè) |
| 文件大小： | 568K |
| 代理商： | HMMC-5618 |
3
Applications
The HMMC-5618 is a GaAs MMIC
medium-power amplifier designed
for optimum Class-A efficiency and
flat gain performance from 6 GHz
to 20 GHz. It has applications as
a cascadable gain stage for EW
amplifier, buffer stages, LO-port driver,
phased-array radar, and transmitter
amplifiers used in commercial
communication systems. The MMIC
solution is a cost effective alternative
to hybrid assemblies.
Biasing and operation
The MMIC amplifier is normally biased
with a single positive drain supply
connected to both V
D1 and VD2 bond
pads as shown in Figures 10 and 11.
The recommended drain supply voltage
is 3 to 5 volts. If desired, the first
stage drain bonding pad can be biased
separately to provide a small amount
of gain slope control or bandwidth
extension as demonstrated in Figure 2.
No ground wires are required because
all ground connections are made with
plated through-holes to the backside of
the device.
Gate bias pads (V
G1 and VG2) are
also provided to allow adjustments in
gain, RF output power, and DC power
dissipation, if necessary. No connection
to the gate pads is needed for single
drain-bias operation. However, for
custom applications, the DC current
flowing through the input and/or
output gain stage may be adjusted
by applying a voltage to the gate
bias pad(s) as shown in Figure 11. A
negative gate-pad voltage will decrease
the drain current. The gate-pad voltage
is approximately zero volts during
operation with no DC gate supply. Refer
to the "Absolute maximum ratings"
table for allowed DC and thermal
conditions.
Assembly techniques
It is recommended that the RF input, RF
output, and DC supply connections be
made using 0.7 mil diameter gold wire.
The device has been designed so that
optimum performance is realized when
the RF input and RF output bond-wire
inductance is approximately 0.2 nH
(10 mils) as demonstrated in Figures 4,
6, and 7.
GaAs MMICs are ESD sensitive. ESD
preventive measures must be employed
in all aspects of storage, handling, and
assembly.
MMIC ESD precautions, handling
considerations, die attach and
bonding methods are critical factors in
successful GaAs MMIC performance
and reliability.
Agilent application note #54, "GaAs
MMIC ESD, Die Attach and Bonding
Guidelines" provides basic information
on these subjects.
Additional references
AN #49, "HMMC-5618 (6-20 GHz)
Amplifier"
PN #14, "HMMC-5618 Driven by an
HMMC-5020"
Out
In
Matching
VG1
Feedback
network
2 K
VG2
1 K
2 K
Matching
VD1
Matching
VD2
Figure 1. Simplified schematic diagram
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