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參數(shù)資料
| 型號： | HMMC-5200 |
| 廠商： | AGILENT TECHNOLOGIES INC |
| 元件分類： | 放大器 |
| 英文描述： | 0 MHz - 20000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |
| 封裝： | 0.0181 X 0.0161 INCH, 0.0056 INCH HEIGHT, DIE |
| 文件頁數(shù)： | 5/8頁 |
| 文件大?。?/td> | 327K |
| 代理商： | HMMC-5200 |
5
S-Parameters1 (T
A = 25°C, VCC = +6 V, Rout = 100 , Lin/out = 0.17 nH)
Frequency
S11
S12
S21
S22
(GHz)
dB
mag
ang
dB
mag
ang
dB
mag
ang
dB
mag
ang
0.0
–30.4
0.030
28.9
–14.1
0.197
0.0
9.5
3.013
179.9
–28.4
0.038
–1.5
1.0
–29.5
0.033
24.9
–14.1
0.195
–2.0
9.5
2.999
171.5
–29.3
0.034
–7.049
2.0
–28.7
0.037
27.3
–14.2
0.194
–4.1
9.5
2.992
163.2
–30.8
0.029
–15.233
3.0
–27.2
0.043
33.5
–14.2
0.195
–6.2
9.5
3.009
155.0
–31.5
0.026
–23.9
4.0
–25.6
0.052
32.4
–14.1
0.195
–8.3
9.6
3.036
146.7
–33.6
0.022
–42.7
5.0
–24.8
0.058
33.3
–14.1
0.195
–10.4
9.7
3.062
138.2
–35.8
0.016
–72.8
6.0
–24.0
0.063
31.1
–14.1
0.196
–12.6
9.8
3.097
129.6
–36.6
0.015
–109.3
7.0
–23.1
0.070
27.1
–14.1
0.197
–14.7
9.9
3.135
120.9
–34.1
0.020
–143.3
8.0
–22.6
0.074
21.9
–14.0
0.197
–16.9
10.0
3.181
112.0
–30.1
0.031
–166.4
9.0
–22.5
0.074
15.7
–14.0
0.198
–19.1
10.1
3.225
102.9
–26.9
0.045
176.1
10.0
–22.3
0.076
8.55
–14.0
0.199
–21.4
10.2
3.266
93.5
–24.4
0.060
164.4
11.0
–22.4
0.076
–0.36
–13.9
0.200
–23.6
10.3
3.298
83.9
–22.5
0.075
154.2
12.0
–22.5
0.075
–13.5
–13.9
0.201
–25.8
10.4
3.322
74.2
–20.9
0.090
147.9
13.0
–22.8
0.072
–27.9
–13.8
0.203
–28.2
10.4
3.338
64.4
–19.5
0.105
141.1
14.0
–23.2
0.069
–47.1
–13.8
0.204
–30.6
10.4
3.332
54.2
–18.3
0.121
134.2
15.0
–22.9
0.071
–69.7
–13.7
0.205
–33.1
10.3
3.306
44.0
–17.5
0.133
128.4
16.0
–22.5
0.075
–93.4
–13.6
0.207
–35.7
10.2
3.253
33.7
–16.7
0.145
122.0
17.0
–20.8
0.091
–115.1
–13.6
0.208
–37.9
10.0
3.181
23.5
–16.0
0.158
118.6
18.0
–19.2
0.109
–134.4
–13.5
0.210
–40.8
9.7
3.085
13.4
–15.5
0.167
112.3
19.0
–17.4
0.134
–149.6
–13.4
0.212
–43.8
9.4
2.975
3.5
–15.3
0.172
109.7
20.0
–15.8
0.161
–161.7
–13.4
0.213
–46.8
9.0
2.844
–6.0
–15.2
0.172
106.0
21.0
–14.4
0.190
–172.3
–13.4
0.213
–49.8
8.6
2.706
–15.4
–14.9
0.179
105.1
22.0
–13.1
0.220
178.7
–13.4
0.213
–52.9
8.1
2.560
–24.4
–14.9
0.178
104.0
23.0
–12.0
0.250
170.7
–13.4
0.212
–55.6
7.6
2.416
–33.0
–14.7
0.183
103.0
24.0
–11.0
0.281
163.3
–13.4
0.212
–58.3
7.1
2.272
–41.3
–14.5
0.187
104.9
25.0
–10.1
0.313
157.0
–13.5
0.211
–61.2
6.5
2.134
–49.2
–14.2
0.193
105.7
26.0
–9.29
0.343
150.8
–13.4
0.212
–63.9
6.0
1.997
–56.9
–13.8
0.203
106.8
1
S-parameter data obtained from on-wafer device measurement plus simulation of input and output wire bond inductance.
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