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參數(shù)資料
| 型號： | HMMC-5038 |
| 元件分類： | 放大器 |
| 英文描述： | 37000 MHz - 40000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |
| 封裝： | 0.0642 X 0.0299 INCH, DIE |
| 文件頁數(shù)： | 2/7頁 |
| 文件大小： | 115K |
| 代理商： | HMMC-5038 |
2
HMMC-5038 DC Specifications/Physical Properties[1]
Symbol
Parameters and Test Conditions
Units
Min.
Typ.
Max.
V
D1,2-3-4
Low Noise Drain Supply Operating Voltages
V
2
3
5
I
D1
First Stage Drain Supply Current
mA
22
(V
DD = 3 V, VG1 -0.8 V)
I
D2-3-4
Drain Supply Current for Stage 2, 3, and 4 Combined
mA
98
(V
DD = 3 V, VGG -0.8 V)
V
G1,2-3-4
Gate Supply Operating Voltages
V
-0.8
(I
DD 120 mA)
V
P
Pinch-off Voltage
V
-2
-1.2
-0.8
(V
DD = 3 V, IDD ≤ 10 mA)
θ
ch-bs
Thermal Resistance[2]
°C/W
62
(Channel-to-Backside at Tch = 160°C)
Tch
Channel Temperature[3] (Tbackside = 25°C)
°C
150
Notes:
1. Backside ambient operating temperature TA = 25°C unless otherwise noted.
2. Thermal resistance (
°C/Watt) at a channel temperature T(°C) can be estimated using the equation: θ(T) 62 x [T(°C) + 273]/[160°C + 273].
3. De-rate MTTF by a factor of two for every 8
°C above T
ch.
RF Specifications, T
A = 25°C, VDD = 3 V, I
DD = 120 mA, Zo = 50
Symbol
Parameters and Test Conditions
Units
Min.
Typ.
Max.
BW
Operating Bandwidth
GHz
37
40
Gain
Small Signal Gain[1]
dB
20
23
Gain
Small Signal Gain Flatness
dB
±0.5
S
21/T
Temperature Coefficient of Gain
dB/
°C
-0.4
(RLin)MIN
Minimum Input Return Loss w/o external capacitive matching[2]
dB
8
12
(RLout)MIN
Minimum Output Return Loss
dB
12
18
Isolation
Reverse Isolation
dB
50
P
-1dB
Output Power at 1dB Gain Compression
dBm
12
NF
Noise Figure[3]
dB
4.8
5.5
NF/T
Temperature Coefficient of NF
dB/
°C
+.02
Notes:
1. Gain may be reduced by biasing for lower I
DD. Increasing IDD will increase gain.
2. Minimum input return may be improved by approximately 3 dB by including a small capactive (30 fF) stub on the input transmission line.
3. Noise figure may be further reduced by optimizing DC bias conditions.
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