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參數(shù)資料
| 型號： | HMMC-5027 |
| 英文描述： | 2 -26.5 GHz Broadband Traveling Wave Amplifier(2 -26.5 GHz 寬頻行波放大器（用于中等功率）) |
| 中文描述： | 2 -26.5 GHz的寬帶行波放大器（2 -26.5 GHz的寬頻行波放大器（用于中等功率）） |
| 文件頁數(shù)： | 4/6頁 |
| 文件大?。?/td> | 91K |
| 代理商： | HMMC-5027 |
4
Figure 2. HMMC-5027 Bonding Pad Locations.
Figure 3. HMMC-5027 Assembly Diagram.
V
DD
(V
DD
and Aux Drain Pads)
(V
G2
Pad)
(RF Input Pad)
Aux.
Drain
RF
Input
700
70
Chip ID No.
Aux. Gate
V
G1
V
G2
RF
Output
770
(
±
10
μ
m)
75
285
555
2910
2900
2580
2290
70
(RF Output Pad)
2980 (
±
10
μ
m)
465
220
0
Notes:
All dimensions in microns.
Rectangular Pad Dim: 75 x 75
μ
m.
Octagonal Pad Dim: 90
μ
m dia.
All other dimensions
±
5
μ
m (unless otherwise noted).
Chip thickness: 127
±
15
μ
m.
V
DD
V
G1
OUT
IN
1.5 mil dia.Gold Wire
Bond to
≥
15 nF
DC Feedthru
4 nH Inductor
(1.0 mil Gold Wire Bond
with length of 200 mils)
0.7 mil dia. Gold Bond Wire
(Length NOT important)
Gold Plated Shim
2.0 mil
nom. gap
≥
68 pF Capacitor
Input and Output Thin Film
Circuit with
≥
8 pF
DC Blocking Capacitor
2.0 mil
nom. gap
Trace Offset
168
μ
m
(6.6 mils)
1.5 mil dia.Gold Wire
Bond to
≥
15 nF DC Feedthru
Bonding Island
Trace Offset
168
μ
m
(6.6 mils)
Note:
Total offset between RF input and RF
output pad is 335
μ
m (13.2 mils).
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| HMMC-5032 | 制造商:Agilent Technologies 功能描述:RF AMP MOD SGL PWR AMP 32GHZ 5V - Gel-pak, waffle pack, wafer, diced wafer on film |
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| HMMC-5038 | 制造商:AGILENT 制造商全稱:AGILENT 功能描述:38 GHz LNA |
| HMMC-5040 | 制造商:Agilent Technologies 功能描述:RF AMP CHIP SGL GP 40GHZ 5V - Gel-pak, waffle pack, wafer, diced wafer on film |
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