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參數(shù)資料
| 型號： | HMMC-5027 |
| 英文描述： | 2 -26.5 GHz Broadband Traveling Wave Amplifier(2 -26.5 GHz 寬頻行波放大器（用于中等功率）) |
| 中文描述： | 2 -26.5 GHz的寬帶行波放大器（2 -26.5 GHz的寬頻行波放大器（用于中等功率）） |
| 文件頁數(shù)： | 3/6頁 |
| 文件大?。?/td> | 91K |
| 代理商： | HMMC-5027 |
3
HMMC-5027 Applications
The HMMC-5027 series of travel-
ing wave amplifiers are designed
for use as general purpose
wideband power stages in
communication systems and
microwave instrumentation. They
are ideally suited for broadband
applications requiring a flat gain
response and excellent port
matches over a 2 to 26.5 GHz
frequency range. Dynamic gain
control and low-frequency
extension capabilities are
designed into these devices.
Biasing and Operation
These amplifiers are biased with
a single positive drain supply
(V
DD
) and a single negative gate
supply (V
G1
). The recommended
bias conditions for the
HMMC-5027 are V
DD
= 8.0V,
I
DD
= 250 mA or I
DSS
, whichever is
less. To achieve this drain current
level, V
G1
is typically biased
between 0V and -0.6V. No other
bias supplies or connections to
the device are required for 2 to
26.5 GHz operation. The gate
voltage (V
G1
) MUST be applied
prior to the drain voltage (V
DD
)
during power up and removed
after the drain voltage during
power down. See Figure 3 for
assembly information.
The auxiliary gate and drain
contacts are used only for low-
frequency performance extension
below
≈
1.0 GHz. When used,
these contacts must be AC
coupled only. (Do not attempt to
apply bias to these pads.)
The second gate (V
G2
) can be
used to obtain 30 dB (typical)
dynamic gain control. For normal
operation, no external bias is
required on this contact and its
self-bias potential is between +1.5
and +2.5 volts. Applying an
external bias between its open
circuit potential and -2.5 volts will
adjust the gain while maintaining
a good input/output port match.
Assembly Techniques
Solder die-attach using a fluxless
AuSu solder preform is the
recommended assembly method.
Gold thermosonic wedge bonding
with 0.7 mil diameter Au wire is
recommended for all bonds. Tool
force should be 22
±
1 gram, stage
temperature should be 150
±
2
°
C,
and ultrasonic power and dura-
tion should be 64
±
1 dB and
76
±
8 msec, respectively. The
bonding pad and chip backside
metallization is gold.
For more detailed information
see Agilent application note #999
“GaAs MMIC Assembly and
Handling Guidelines.”
GaAs MMICs are ESD sensitive.
Proper precautions should be used
when handling these devices.
Figure 1. HMMC-5027 Schematic.
Aux. Drain
Drain Bias
(V
DD
)
RF Input
Single Stage Shown
First Gate
Bias (V
G1
)
Second Gate
Bias (V
G2
)
RF Output
Aux. Gate
Notes:
FET gate periphery in microns.
All resistors in ohms. (
),
(or in K-ohms, where indicated)
Seven Identical Stages
50
248
248
17K
15K
30K
7.5
5.5
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| HMMC-5032 | 制造商:Agilent Technologies 功能描述:RF AMP MOD SGL PWR AMP 32GHZ 5V - Gel-pak, waffle pack, wafer, diced wafer on film |
| HMMC-5033 | 制造商:Agilent Technologies 功能描述:RF AMP MOD SGL PWR AMP 32GHZ 5V - Gel-pak, waffle pack, wafer, diced wafer on film |
| HMMC-5034 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:37-43 GHz Amplifier |
| HMMC-5038 | 制造商:AGILENT 制造商全稱:AGILENT 功能描述:38 GHz LNA |
| HMMC-5040 | 制造商:Agilent Technologies 功能描述:RF AMP CHIP SGL GP 40GHZ 5V - Gel-pak, waffle pack, wafer, diced wafer on film |
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