參數(shù)資料
型號(hào): HMMC-5022
英文描述: 2-22 GHz GaAs MMIC Traveling Wave Amplifier(2-22 GHz砷化鎵單片微波集成電路行波放大器)
中文描述: 2-22千兆赫砷化鎵單片行波放大器(2-22千兆赫砷化鎵單片微波集成電路行波放大器)
文件頁(yè)數(shù): 6/6頁(yè)
文件大?。?/td> 99K
代理商: HMMC-5022
This data sheet contains a variety of typical and guaranteed performance data. The
information supplied should not be interpreted as a complete list of circuit specifica-
tions. In this data sheet the term
typical
refers to the 50th percentile performance. For
additional information contact your local Agilent sales representative.
HMMC-5021/22/26 Typical Temperature Performance
2
4
6
12
8 10
16 18 20
14
26.5
24
22
FREQUENCY (GHz)
V
DD
= 7.0 V, I
DD
(
@ T
A
= 25
°
C) = 150 mA
Figure 6. Typical Small-Signal Gain vs.
Temperature.
15
14
13
12
11
10
9
8
7
6
5
S
2
T
CASE
:
–55
°
C
–25
°
C
0
°
C
+25
°
C
+55
°
C
+85
°
C
+115
°
C
.015 dB/
°
C
.022 dB/
°
C
.03 dB/
°
C
2
4
6
12
8 10
16 18 20
14
26.5
24
22
FREQUENCY (GHz)
V
DD
= 7.0 V, V
GI
–0.3 V
Figure 7. Typical Gain vs. Second Gate
Control Voltage.
20
10
0
–10
–20
–30
–40
–50
S
2
V
G2
= +2.1 V, I
DD
= 150 mA
V
G2
= +0.5 V, I
DD
= 140 mA
V
G2
= 0.0 V, I
DD
= 128 mA
V
G2
= –0.5 V, I
DD
= 104 mA
V
G2
= –1.0 V, I
DD
= 70 mA
V
G2
= –1.5 V, I
DD
= 36 mA
V
G2
= –3.0 V/–2.5 V, I
DD
= 11 mA
V
G2
= –2.0 V, I
DD
= 14 mA
2
4
6
12
8 10
16 18 20
14
26.5
24
22
FREQUENCY (GHz)
V
DD
= 7.0 V, I
DD
(Q) = 150 mA
Figure 8. Typical 1 dB Gain
Compression and Saturated Output
Power.
24
22
20
18
16
14
12
10
O
P(sat)
P(–1 dB)
2
4
6
12
8 10
16 18 20
14
26.5
24
22
FUNDAMENTAL FREQUENCY,
o
(GHz)
V
DD
= 7.0 V, I
DD
(Q) = 150 mA
Figure 9. Typical Second and Third
Harmonics vs. Fundamental Frequency
at P
OUT
= +17 dBm.
–10
–15
–20
–25
–30
–35
–40
–45
–50
–55
–60
H
2nd Harmonics
3rd Harmonics
Figure 10. Typical Noise Figure
Performance.
12
10
8
6
4
2
0
12
10
8
6
4
N
A
2
4
6
12
8 10
16 18 20
14
26.5
24
22
FREQUENCY (GHz)
Standard Bias:
V
DD
= 7.0 V, I
DD
= 150 mA
Optimal NF Bias:
V
DD
= 6.0 V, I
DD
= 66 mA
Note:
1. All data measured on individual devices mounted in an HP83040 Series
Modular Microcircuit Package @ TA = 25
°
www.semiconductor.agilent.com
Data subject to change.
Copyright 1999 Agilent Technologies
Obsoletes 5952-1838, 5091-0681E
5965-5449E (11/99)
相關(guān)PDF資料
PDF描述
HMMC-5026 2-26.5 GHz GaAs MMIC Traveling Wave Amplifier(2-26.5 GHz砷化鎵單片微波集成電路行波放大器)
HMMC-5021 2-22 GHz GaAs MMIC Traveling Wave Amplifier(2-22 GHz砷化鎵單片微波集成電路行波放大器)
HMMC-5023 21.2-26.5 GHz High-Gain Low-Noise Amplifier(21.2-26.5 GHz 高增益低噪聲放大器)
HMMC-5025 2 -50 GHz Wide band Distributed Amplifier(2 -50 GHz寬帶分布式放大器)
HMMC-5027 2 -26.5 GHz Broadband Traveling Wave Amplifier(2 -26.5 GHz 寬頻行波放大器(用于中等功率))
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HMMC-5023 制造商:Agilent Technologies 功能描述:RF AMP MOD SGL GP AMP 26.5GHZ 7V - Gel-pak, waffle pack, wafer, diced wafer on film
HMMC-5025 制造商:Agilent Technologies 功能描述:RF AMP MOD SGL GP AMP 50GHZ 7V - Gel-pak, waffle pack, wafer, diced wafer on film
HMMC-5026 制造商:Agilent Technologies 功能描述:RF AMP MOD SGL GP AMP 26.5GHZ 8V - Gel-pak, waffle pack, wafer, diced wafer on film
HMMC-5027 制造商:Agilent Technologies 功能描述:RF AMP MOD SGL PWR AMP 26.5GHZ 8V CHIP - Gel-pak, waffle pack, wafer, diced wafer on film
HMMC-5032 制造商:Agilent Technologies 功能描述:RF AMP MOD SGL PWR AMP 32GHZ 5V - Gel-pak, waffle pack, wafer, diced wafer on film