參數(shù)資料
型號(hào): HMD2M64B2-F8
廠商: Hanbit Electronics Co.,Ltd.
英文描述: Synchronous DRAM Module 16Mbyte (2Mx64-Bit), SO-DIMM, 4Banks, 4K Ref., 3.3V
中文描述: 同步DRAM模塊16Mbyte(2Mx64位),SO - DIMM插槽,4Banks,4K的參考。,3.3
文件頁數(shù): 8/10頁
文件大?。?/td> 87K
代理商: HMD2M64B2-F8
HANBit HSD2M64B2
URL:www.hbe.co.kr HANBit Electronics Co.,Ltd.
REV.1.0 (August.2002)
AC CHARACTERISTICS
(AC operating conditions unless otherwise noted)
-8
-10
PARAMETER
SYMBOL
MIN
MAX
MIN
MAX
MIN
MAX
MIN
MAX
UNIT
NOTE
CAS
latency=3
8
10
CLK cycle time
CAS
latency=2
t
CC
10
1000
12
1000
ns
1
CAS
latency=3
6
6
CLK to valid
output delay
CAS
latency=2
t
SAC
6
8
ns
1,2
Output data
hold time
t
OH
2.5
2.5
ns
2
CLK high pulse width
t
CH
3
3.5
ns
3
CLK low pulse width
t
CL
3
3.5
ns
3
Input setup time
t
SS
2
2.5
ns
3
Input hold time
t
SH
1
1
ns
3
CLK to output in Low-Z
t
SLZ
1
1
ns
3
CAS
latency=3
6
6
ns
2
CLK to output
in Hi-Z
CAS
latency=2
t
SHZ
-
6
8
ns
Notes :
1. Parameters depend on programmed CAS latency.
2. If clock rising time is longer than 1ns, (tr/2-0.5)ns should be added to the parameter.
3. Assumed input rise and fall time (tr & tf) = 1ns.
If tr & tf is longer than 1ns, transient time compensation should be considered, ie., [(tr + tf)/2-1]ns should be added to
the parameter.
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