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參數(shù)資料
| 型號(hào)： | HMD2M64B2-F8 |
| 廠商： | Hanbit Electronics Co.,Ltd. |
| 英文描述： | Synchronous DRAM Module 16Mbyte (2Mx64-Bit), SO-DIMM, 4Banks, 4K Ref., 3.3V |
| 中文描述： | 同步DRAM模塊16Mbyte（2Mx64位），SO - DIMM插槽，4Banks，4K的參考。，3.3 |
| 文件頁(yè)數(shù)： | 5/10頁(yè) |
| 文件大小： | 87K |
| 代理商： | HMD2M64B2-F8 |
HANBit HSD2M64B2
URL:www.hbe.co.kr HANBit Electronics Co.,Ltd.
REV.1.0 (August.2002)
DC OPERATING CONDITIONS
(Recommended operating conditions (Voltage referenced to VSS = 0V, TA = 0 to 70
°
C) )
PARAMETER
SYMBOL
MIN
TYP.
MAX
UNIT
NOTE
Supply Voltage
Vcc
3.0
3.3
3.6
V
Input High Voltage
V
IH
2.0
3.0
Vcc+0.3
V
1
Input Low Voltage
V
IL
-0.3
0
0.8
V
2
Output High Voltage
V
OH
2.4
-
-
V
I
OH
= -2mA
Output Low Voltage
V
OL
-
-
0.4
V
I
OL
= 2mA
Input leakage current
Notes:
1. V
IH
(max) = 5.6V AC. The overshoot voltage duration is
≤
3ns.
2. V
IL
(min) = -2.0V AC. The undershoot voltage duration is
≤
3ns.
3. Any input 0V
≤
V
≤
V
.
Input leakage currents include Hi-Z output leakage for all bi-directional buffers with Tri-State outputs.
I
LI
-10
-
10
uA
3
CAPACITANCE
(VCC = 3.3V, TA = 23
°
C, f = 1MHz, VREF =1.4V
±
200 mV)
DESCRIPTION
SYMBOL
MIN
MAX
UNITS
Clock
C
CLK
2.5
4.0
pF
/RAS, /CAS,/WE,/CS, CKE, DQM
C
IN
2.5
4.5
pF
Address
C
ADD
2.5
4.5
pF
DQ (DQ0 ~ DQ31)
C
OUT
4.0
6.5
pF
DC CHARACTERISTICS
(Recommended operating condition unless otherwise noted, TA = 0 to 70
°
C)
VERSION
PARAMETER
SYMBOL
TEST
CONDITION
-8
-10
UNIT
NOTE
Operating current
(One bank active)
I
CC1
Burst length = 1
t
RC
≥
t
RC
(min)
I
O
= 0mA
130
115
mA
2
I
CC2
P
CKE
≤
V
IL
(max)
t
CC
=10ns
2
mA
Precharge standby current in
power-down mode
I
CC2
PS
CKE & CLK
≤
V
IL
(max)
t
CC
=
∞
2
mA
Precharge standby current in
non power-down mode
I
CC2
N
CKE
≥
V
IH
(min)
CS*
≥
V
IH
(min), t
CC
=10ns
Input signals are changed
one time during 20ns
20
mA
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