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參數(shù)資料
| 型號(hào)： | HMD1M1Z1-6 |
| 廠商： | Hanbit Electronics Co.,Ltd. |
| 英文描述： | 1Mbit(1Mx1bit) Fast Page Mode, 1K Refresh, 20Pin ZIP, 5V Design |
| 中文描述： | 為1Mbit（1Mx1bit）快速頁(yè)面模式，每1000刷新，20針郵編，5V的設(shè)計(jì) |
| 文件頁(yè)數(shù)： | 3/6頁(yè) |
| 文件大?。?/td> | 188K |
| 代理商： | HMD1M1Z1-6 |
HANBit HMD1M1Z1
HANBit Electronics Co.,Ltd.
3
Note: 1. Icc depends on output load condition when the device is selected.
Icc (max) is specified at the output open condition.
2. Address can be changed once or less while /RAS = V
IL.
3. Address can be changed once or less while /CAS = V
IH
CAPACITANCE
( T
A
=25
o
C, Vcc = 5V+/- 10%, f = 1Mhz )
DESCRIPTION
SYMBOL
MIN
MAX
UNITS NOTE
Input Capacitance (A0-A9)
C
I1
-
5
pF 1
Input Capacitance (/WE,/RAS, /CAS0-
/CAS3,/OE)
C
I2
-
7
pF 1,2
Input/Output Capacitance (DQ0-31)
C
DQ1
-
7
pF 1,2
Note: 1. Capacitance measured with Boonton Meter or effective capacitance measuring method.
2. /CAS = VIH to disable DOUT.
AC CHARACTERISTICS
( 0
o
C
≤
T
A
≤
70oC , Vcc = 5V
±
10%, V
IH
/V
IL
= 2.4/0.8V, V
OH
/V
OL
=2.4/0.4V, See notes 1,2)
-5
-6
SYMBOL
PARAMETER
MIN
MAX
MIN
MAX
UNIT
NOTE
t
RC
Random Read or Write Cycle Time
90
110
ns
t
RWC
Read-modify-writer cycle time
110
130
ns
t
RAC
Access Time from /RAS
50
60
ns
3,4,10
t
CAC
Access Time from /CAS
15
15
ns
3,4,5
t
aa
Access Time from Column Address
25
30
ns
3,10
t
OFF
Output Buffer Turn-off Time
0
12
0
12
ns
6
t
T
Transition Time (Rise and Fall)
3
50
3
50
ns
2
t
RP
/RAS Precharge Time
30
40
ns
t
RAS
/RAS Pulse Width
50
10K
60
10K
ns
t
RSH
/RAS Hold Time
15
15
ns
t
CSH
/CAS Hold Time
50
60
ns
t
CAS
/CAS Pulse Width
15
10K
15
10K
ns
t
RCD
/RAS to /CAS Delay Time
20
35
20
45
ns
4
t
RAD
/RAS to Column Address Delay Time
15
25
15
30
ns
10
t
CRP
/CAS to /RAS Precharge Time
5
5
ns
t
ASR
Row Address Setup Time
0
0
ns
t
RAH
Row Address Hold Time
10
10
ns
t
ASC
Column Address Setup Time
0
0
ns
11
t
CAH
Column Address Hold Time
10
10
ns
11
t
RAL
Column Address to /RAS Lead Time
25
30
ns
t
RCS
Read Command Setup Time
0
0
ns
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