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參數(shù)資料
| 型號(hào)： | HMC320MS8GE |
| 廠商： | HITTITE MICROWAVE CORP |
| 元件分類： | 放大器 |
| 英文描述： | 5000 MHz - 6000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |
| 封裝： | ROHS COMPLIANT, ULTRA SMALL, PLASTIC, SMT, MSOP-8 |
| 文件頁數(shù)： | 5/6頁 |
| 文件大小： | 203K |
| 代理商： | HMC320MS8GE |
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
L
O
W
NO
IS
E
A
M
P
L
IF
IE
R
S
-
SM
T
8
8 - 24
Absolute Maximum Ratings
Outline Drawing
Truth Table
Set external bias resistor (RBIAS) to achieve desired operat-
ing current, 0 < RBIAS < 200 Ohm.
NOTES:
1. LEADFRAME MATERIAL: COPPER ALLOY
2. DIMENSIONS ARE IN INCHES [MILLIMETERS]
3. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE.
4. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE.
5. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO
PCB RF GROUND.
Drain Bias Voltage (Vdd)
+7.0 Vdc
Control Voltage Range (VSET)
0 to Vdd
RF Input Power (RFIN)(Vdd = +3.0 Vdc)
+5 dBm
Channel Temperature
150 °C
Continuous Pdiss (T = 85 °C)
(derate 2.98 mW/°C above 85 °C)
0.194 W
Thermal Resistance
(channel to ground paddle)
336 °C/W
Storage Temperature
-65 to +150 °C
Operating Temperature
-40 to +85 °C
ESD Sensitivity (HBM)
Class 1A
VSET
Operating
Current Idd
Operating
State
Resistor Rbias
0V
7 mA
Low Power
174 Ohm
3V
25 mA
Medium Power
22 Ohm
3V
40 mA
High Power
7 Ohm
HMC320MS8G / 320MS8GE
GaAs MMIC LOW NOISE
AMPLIFIER , 5 - 6 GHz
v03.0308
Part Number
Package Body Material
Lead Finish
MSL Rating
Package Marking
[3]
HMC320MS8G
Low Stress Injection Molded Plastic
Sn/Pb Solder
MSL1
[1]
H320
XXXX
HMC320MS8GE
RoHS-compliant Low Stress Injection Molded Plastic
100% matte Sn
MSL1
[2]
H320
XXXX
[1] Max peak reflow temperature of 235 °C
[2] Max peak reflow temperature of 260 °C
[3] 4-Digit lot number XXXX
Package Information
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
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