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參數(shù)資料
| 型號： | HMC320MS8GE |
| 廠商： | HITTITE MICROWAVE CORP |
| 元件分類： | 放大器 |
| 英文描述： | 5000 MHz - 6000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |
| 封裝： | ROHS COMPLIANT, ULTRA SMALL, PLASTIC, SMT, MSOP-8 |
| 文件頁數(shù)： | 4/6頁 |
| 文件大小： | 203K |
| 代理商： | HMC320MS8GE |
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
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Adaptive Biasing
Applying the adaptive biasing
A dynamically controlled bias can be implemented with this design. A typical application wil include sens-
ing an RF signal level and then adjusting the VSET. The bias adjustment can be accomplished by either
analog or digitals means, after the RF signal has been detected and translated to a DC voltage using
external power detection circuitry.
Optimizing P1dB Performance
The bias level may be changed to adjust the P1dB and return loss performance. The table below contains the HMC-
320MS8G RF performance as a function of various VSET and RBIAS settings. It will be necessary for the VSET
voltage source to provide 100uA of current to the amplifier. The Idd and Vdd quiescent performance will not change
as a function of changing the VSET voltage.
RF Performance at 5.8 GHz (Vdd = +3V)
Schematic
VSET
(VDC)
RBIAS Resistor
Between Pin 3 and
GND (Ohms)
Idd (mA)
Output
P1dB (dBm)
Output
Return Loss
(dB)
0
174
7
1.0
16.0
3
22
25
9.0
12.0
3
7
40
13.0
15.0
3
GND
(No Resistor)
60
14.0
15.0
HMC320MS8G / 320MS8GE
GaAs MMIC LOW NOISE
AMPLIFIER , 5 - 6 GHz
v03.0308
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