參數(shù)資料
型號(hào): HMC-ALH435
廠商: HITTITE MICROWAVE CORP
元件分類: 放大器
英文描述: 5000 MHz - 20000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
封裝: 1.48 X 0.90 MM, 0.10 MM HEIGHT, DIE-5
文件頁(yè)數(shù): 3/6頁(yè)
文件大?。?/td> 204K
代理商: HMC-ALH435
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For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC-ALH435
v03.1009
GaAs HEMT MMIC LOW NOISE
AMPLIFIER, 5 - 20 GHz
Outline Drawing
Absolute Maximum Ratings
Drain Bias Voltage
+5.5 Vdc
RF Input Power
15 dBm
Channel Temperature
180 °C
Continuous Power Pdiss (T = 85 °C)
derate 4.7 mW/ °C above 85 °C
0.45 W
Thermal Resistance
(channel to die bottom)
213.3 °C/W
Storage Temperature
-65 to +150 °C
Operating Temperature
-55 to +85 °C
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
NOTES:
1. ALL DIMENSIONS ARE IN INCHES [MM].
2. TYPICAL BOND PAD IS .004” SQUARE.
3. BACKSIDE METALLIZATION: GOLD.
4. BACKSIDE METAL IS GROUND.
5. BOND PAD METALLIZATION: GOLD.
6. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS.
7. OVERALL DIE SIZE ±.002”
Die Packaging Information [1]
Standard
Alternate
GP-2 (Gel Pack)
[2]
[1] Refer to the “Packaging Information” section for die
packaging dimensions.
[2] For alternate packaging information contact Hittite
Microwave Corporation.
相關(guān)PDF資料
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HMC-ALH482 2000 MHz - 22000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
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