參數(shù)資料
型號(hào): HMC-ABH209
廠商: HITTITE MICROWAVE CORP
元件分類: 放大器
英文描述: 55000 MHz - 65000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
封裝: 2.20 X 1.22 MM, 0.10 MM HEIGHT, DIE-4
文件頁數(shù): 1/6頁
文件大?。?/td> 185K
代理商: HMC-ABH209
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For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
GaAs HEMT MMIC MEDIUM POWER
AMPLIFIER, 55 - 65 GHz
v02.0209
General Description
Features
Functional Diagram
Output IP3: +25 dBm
P1dB: +16 dBm
Gain: 13 dB
Supply Voltage: +5V
50 Ohm Matched Input/Output
Die Size: 2.2 x 1.22 x 0.1 mm
Electrical Specifications
, T
A = +25° C, Vdd= 5V, Idd= 80 mA
[2]
Typical Applications
This HMC-ABH209 is ideal for:
Short Haul / High Capacity Links
Wireless LAN Bridges
Military & Space
The HMC-ABH209 is a high dynamic range, two
stage GaAs HEMT MMIC Medium Power Amplifier
which operates between 55 and 65 GHz. The HMC-
ABH209 provides 13 dB of gain, and an output power
of +16 dBm at 1dB compression from a +5V supply
voltage. All bond pads and the die backside are
Ti/Au metallized and the amplifier device is fully
passivated for reliable operation. The HMC-ABH209
GaAs HEMT MMIC Medium Power Amplifier is
compatible with conventional die attach methods,
as well as thermocompression and thermosonic
wirebonding, making it ideal for MCM and hybrid
microcircuit applications.
All data shown herein is
measured with the chip in a 50 Ohm environment and
contacted with RF probes.
Parameter
Min.
Typ.
Max.
Units
Frequency Range
55 - 65
GHz
Gain
12
13
dB
Input Return Loss
13
dB
Output Return Loss
17
dB
Output Power for 1 dB Compression (P1dB)
16
dBm
Output Third Order Intercept (IP3)
25
dBm
Saturated Output Power (Psat)
18
dBm
Supply Current (Idd)
80
mA
[1] Unless otherwise indicated, all measurements are from probed die
[2] Adjust Vgg between -1V to +0.3V (typ -0.3V) to achieve Idd
total = 80 mA
HMC-ABH209
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