參數(shù)資料
型號(hào): HM5225805BLTT-A6
廠商: ELPIDA MEMORY INC
元件分類: DRAM
英文描述: 256M LVTTL interface SDRAM 133 MHz/100 MHz 4-Mword 】 16-bit 】 4-bank/8-Mword 】 8-bit 】 4-bank /16-Mword 】 4-bit 】 4-bank PC/133, PC/100 SDRAM
中文描述: 32M X 8 SYNCHRONOUS DRAM, 6 ns, PDSO54
封裝: 0.400 INCH, PLASTIC, TSOP2-54
文件頁(yè)數(shù): 29/63頁(yè)
文件大?。?/td> 462K
代理商: HM5225805BLTT-A6
HM5225165B/HM5225805B/HM5225405B-75/A6/B6
Data Sheet E0082H10
29
Read command to Write command interval:
1. Same bank, same ROW address:
When the write command is executed at the same ROW address of the
same bank as the preceding read command, the write command can be performed after an interval of no less
than 1 clock. However, DQM, DQMU/DQML must be set High so that the output buffer becomes High-Z
before data input.
READ to WRITE Command Interval (1)
CLK
Command
Dout
in B2
in B3
READ
WRIT
in B0
in B1
High-Z
Din
CL=2
CL=3
DQM,
DQMU
/DQML
Burst Length = 4
Burst write
READ to WRITE Command Interval (2)
CLK
Command
Dout
READ
WRIT
Din
CL=2
CL=3
DQM,
DQMU/DQML
High-Z
2 clock
High-Z
2. Same bank, different ROW address:
When the ROW address changes, consecutive write commands
cannot be executed; it is necessary to separate the two commands with a precharge command and a bank-
active command.
3. Different bank:
When the bank changes, the write command can be performed after an interval of no less
than 1 cycle, provided that the other bank is in the bank-active state. However, DQM, DQMU/DQML must
be set High so that the output buffer becomes High-Z before data input.
相關(guān)PDF資料
PDF描述
HM5225405B-B6 256M LVTTL interface SDRAM 133 MHz/100 MHz 4-Mword 】 16-bit 】 4-bank/8-Mword 】 8-bit 】 4-bank /16-Mword 】 4-bit 】 4-bank PC/133, PC/100 SDRAM
HM5225405BLTT-75 POT 20K OHM 9MM HORZ NO BUSHING
HM5225405BLTT-A6 POT 5K OHM 9MM HORZ NO BUSHING
HM5225805B-B6 256M LVTTL interface SDRAM 133 MHz/100 MHz 4-Mword 】 16-bit 】 4-bank/8-Mword 】 8-bit 】 4-bank /16-Mword 】 4-bit 】 4-bank PC/133, PC/100 SDRAM
HM5225805BLTT-75 256M LVTTL interface SDRAM 133 MHz/100 MHz 4-Mword 】 16-bit 】 4-bank/8-Mword 】 8-bit 】 4-bank /16-Mword 】 4-bit 】 4-bank PC/133, PC/100 SDRAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HM5225805BLTT-B6 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:256M LVTTL interface SDRAM 133 MHz/100 MHz 4-Mword 】 16-bit 】 4-bank/8-Mword 】 8-bit 】 4-bank /16-Mword 】 4-bit 】 4-bank PC/133, PC/100 SDRAM
HM5225805BTT-75 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:256M LVTTL interface SDRAM 133 MHz/100 MHz 4-Mword 】 16-bit 】 4-bank/8-Mword 】 8-bit 】 4-bank /16-Mword 】 4-bit 】 4-bank PC/133, PC/100 SDRAM
HM5225805BTT-A6 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:256M LVTTL interface SDRAM 133 MHz/100 MHz 4-Mword 】 16-bit 】 4-bank/8-Mword 】 8-bit 】 4-bank /16-Mword 】 4-bit 】 4-bank PC/133, PC/100 SDRAM
HM5225805BTT-B6 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:256M LVTTL interface SDRAM 133 MHz/100 MHz 4-Mword 】 16-bit 】 4-bank/8-Mword 】 8-bit 】 4-bank /16-Mword 】 4-bit 】 4-bank PC/133, PC/100 SDRAM
HM-523841-1.5-8A 功能描述:電線鑒定 HM 2.06/3.31" LABEL PRICE PER LABEL RoHS:否 制造商:TE Connectivity / Q-Cees 產(chǎn)品:Labels and Signs 類型: 材料:Vinyl 顏色:Blue 寬度:0.625 in 長(zhǎng)度:1 in