參數(shù)資料
型號(hào)： HM-6551883
廠(chǎng)商： Intersil Corporation
英文描述： 256 x 4 CMOS RAM
中文描述： 256 × 4 CMOS存儲(chǔ)器
文件頁(yè)數(shù)： 3/9頁(yè)
文件大?。?/td> 116K
代理商： HM-6551883
6-103
Absolute Maximum Ratings
Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .+7.0V
Input, Output or I/O Voltage . . . . . . . . . . . GND -0.3V to VCC +0.3V
ESD Classification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Class 1
Thermal Information
Thermal Resistance
CERDIP Package . . . . . . . . . . . . . . . .
Maximum Storage Temperature Range . . . . . . . . .-65
o
C to +150
o
C
Maximum Junction Temperature . . . . . . . . . . . . . . . . . . . . . .+175
o
C
Maximum Lead Temperature (Soldering 10s). . . . . . . . . . . .+300
o
C
θ
JA
θ
JC
60
o
C/W
15
o
C/W
Die Characteristics
Gate Count . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1930 Gates
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Operating Conditions
Operating Voltage Range . . . . . . . . . . . . . . . . . . . . . +4.5V to +5.5V
Operating Temperature Range. . . . . . . . . . . . . . . . -55
o
C to +125
o
C
Input Low Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0V to +0.8V
Input High Voltage. . . . . . . . . . . . . . . . . . . . . . . . VCC -2.0V to VCC
Input Rise and Fall Time . . . . . . . . . . . . . . . . . . . . . . . . . .40ns Max.
TABLE 1. HM-6551/883 DC ELECTRICAL PERFORMANCE SPECIFICATIONS
Device Guaranteed and 100% Tested
PARAMETER
SYMBOL
(NOTE 1)
CONDITIONS
GROUP A
SUBGROUPS
TEMPERATURE
LIMITS
UNITS
MIN
MAX
Output Low Voltage
VOL
VCC = 4.5V
IOL = 1.6mA
1, 2, 3
-55
o
C
≤
T
A
≤
+125
o
C
-
0.4
V
Output High Voltage
VOH
VCC = 4.5V
IOH = -0.4mA
1, 2, 3
-55
o
C
≤
T
A
≤
+125
o
C
2.4
-
V
Input Leakage Current
II
VCC = 5.5V,
VI = GND or VCC
1, 2, 3
-55
o
C
≤
T
A
≤
+125
o
C
-1.0
+1.0
μ
A
Output Leakage
Current
IOZ
VCC = 5.5 V,
VO = GND or VCC
1, 2, 3
-55
o
C
≤
T
A
≤
+125
o
C
-1.0
+1.0
μ
A
Data Retention Supply
Current
ICCDR
VCC = 2.0V, E = VCC
IO = 0mA,
VI = VCC or GND
1, 2, 3
-55
o
C
≤
T
A
≤
+125
o
C
-
10
μ
A
Operating Supply
Current
ICCOP
VCC = 5.5V, (Note 2)
E = 1MHz, IO = 0mA
VI = VCC or GND
1, 2, 3
-55
o
C
≤
T
A
≤
+125
o
C
-
4
mA
Standby Supply
Current
ICCSB
VCC = 5.5V,
IO = 0mA
VI = VCC or GND
1, 2, 3
-55
o
C
≤
T
A
≤
+125
o
C
-
10
μ
A
NOTES:
1. All voltages referenced to device GND.
2. Typical derating 1.5mA/MHz increase in ICCOP.
HM-6551/883
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參數(shù)描述
HM-6551B883 制造商:INTERSIL 制造商全稱(chēng):Intersil Corporation 功能描述:256 x 4 CMOS RAM
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HM-6561883 制造商:INTERSIL 制造商全稱(chēng):Intersil Corporation 功能描述:256 x 4 CMOS RAM
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