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參數(shù)資料
| 型號： | HIP6021CB |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類： | 穩(wěn)壓器 |
| 英文描述： | Advanced PWM and Triple Linear Power Controller |
| 中文描述： | SWITCHING CONTROLLER, 215 kHz SWITCHING FREQ-MAX, PDSO28 |
| 文件頁數(shù)： | 14/16頁 |
| 文件大?。?/td> | 186K |
| 代理商： | HIP6021CB |
14
MOSFET Considerations
The HIP6021A requires 5 external transistors. Two N-Channel
MOSFETs are used in the synchronous-rectified buck
topology of PWM1 converter. It is recommended that the
AGP linear regulator pass element be a N-Channel
MOSFET as well. The GTL and memory linear controllers
can also each drive a MOSFET or a NPN bipolar as a pass
transistor. All these transistors should be selected based
upon r
DS(ON)
, current gain, saturation voltages, gate supply
requirements, and thermal management considerations.
PWM MOSFETs
In high-current PWM applications, the MOSFET power
dissipation, package selection and heatsink are the
dominant design factors. The power dissipation includes two
loss components; conduction loss and switching loss. These
losses are distributed between the upper and lower
MOSFETs according to duty factor (see the equations
below). The conduction losses are the main component of
power dissipation for the lower MOSFETs. Only the upper
MOSFET has significant switching losses, since the lower
device turns on and off into near zero voltage.
The equations below assume linear voltage-current
transitions and do not model power loss due to the reverse-
recovery of the lower MOSFET’s body diode. The gate-
charge losses are dissipated by the HIP6021A and don't
heat the MOSFETs. However, large gate-charge increases
the switching time, t
SW
which increases the upper MOSFET
switching losses. Ensure that both MOSFETs are within their
maximum junction temperature at high ambient temperature
by calculating the temperature rise according to package
thermal-resistance specifications. A separate heatsink may
be necessary depending upon MOSFET power, package
type, ambient temperature and air flow.
2
r
IN
2
r
IN
The r
DS(ON)
is different for the two equations above even if
the same device is used for both. This is because the gate
drive applied to the upper MOSFET is different than the
lower MOSFET. Figure 10 shows the gate drive where the
upper MOSFET’s gate-to-source voltage is approximately
VCC less the input supply. For +5V main power and +12VDC
for the bias, the gate-to-source voltage of Q1 is 7V. The
lower gate drive voltage is +12VDC. A logic-level MOSFET is
a good choice for Q1 and a logic-level MOSFET can be used
for Q2 if its absolute gate-to-source voltage rating exceeds
the maximum voltage applied to VCC.
Rectifier CR1 is a clamp that catches the negative inductor
swing during the dead time between the turn off of the lower
MOSFET and the turn on of the upper MOSFET. The diode
must be a Schottky type to prevent the lossy parasitic
MOSFET body diode from conducting. It is acceptable to
omit the diode and let the body diode of the lower MOSFET
clamp the negative inductor swing, but efficiency could drop
one or two percent as a result. The diode's rated reverse
breakdown voltage must be greater than the maximum input
voltage.
Linear Controller Transistors
The main criteria for selection of transistors for the linear
regulators is package selection for efficient removal of heat.
The power dissipated in a linear regulator is:
Select a package and heatsink that maintains the junction
temperature below the rating with a the maximum expected
ambient temperature.
When selecting bipolar NPN transistors for use with the
linear controllers, insure the current gain at the given
operating VCE is sufficiently large to provide the desired
output load current when the base is fed with the minimum
driver output current.
P
UPPER
I
------------------------------------------------------------
×
V
×
I
----------------------------------------------------
V
×
t
×
F
S
×
+
=
P
LOWER
I
--------------------------------------------------------------------------------
×
V
V
–
(
)
×
=
IGURE 10. UPPER GATE DRIVE - DIRECT V
CC
DRIVE OPTION
+12V
PGND
HIP6021A
GND
LGATE
UGATE
PHASE
VCC
+5V OR LESS
NOTE:
V
GS
≈
V
CC
-5V
NOTE:
V
GS
≈
V
CC
Q1
Q2
+
-
CR1
P
LINEAR
I
O
V
IN
V
OUT
–
(
)
×
=
HIP6021A
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| HIP6021EVAL1 | Advanced PWM and Triple Linear Power Controller |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HIP6021CB-T | 功能描述:IC REG QD BCK/LINEAR 28-SOIC RoHS:否 類別:集成電路 (IC) >> PMIC - 穩(wěn)壓器 - 線性 + 切換式 系列:- 標準包裝:2,500 系列:- 拓撲:降壓（降壓）同步（3），線性（LDO）（2） 功能:任何功能 輸出數(shù):5 頻率 - 開關(guān):300kHz 電壓/電流 - 輸出 1:控制器 電壓/電流 - 輸出 2:控制器 電壓/電流 - 輸出 3:控制器 帶 LED 驅(qū)動器:無 帶監(jiān)控器:無 帶序列發(fā)生器:是 電源電壓:5.6 V ~ 24 V 工作溫度:-40°C ~ 85°C 安裝類型:* 封裝/外殼:* 供應(yīng)商設(shè)備封裝:* 包裝:* |
| HIP6021CBZ | 功能描述:電壓模式 PWM 控制器 SINGLE PWM & TRPL LINEAR CNTRLR RoHS:否 制造商:Texas Instruments 輸出端數(shù)量:1 拓撲結(jié)構(gòu):Buck 輸出電壓:34 V 輸出電流: 開關(guān)頻率: 工作電源電壓:4.5 V to 5.5 V 電源電流:600 uA 最大工作溫度:+ 125 C 最小工作溫度:- 40 C 封裝 / 箱體:WSON-8 封裝:Reel |
| HIP6021CBZ-T | 功能描述:電壓模式 PWM 控制器 SINGLE PWM & TRPL LINEAR CNTRLR RoHS:否 制造商:Texas Instruments 輸出端數(shù)量:1 拓撲結(jié)構(gòu):Buck 輸出電壓:34 V 輸出電流: 開關(guān)頻率: 工作電源電壓:4.5 V to 5.5 V 電源電流:600 uA 最大工作溫度:+ 125 C 最小工作溫度:- 40 C 封裝 / 箱體:WSON-8 封裝:Reel |
| HIP6021EVAL1 | 功能描述:電源管理IC開發(fā)工具 HIP6021 EVAL BRD RoHS:否 制造商:Maxim Integrated 產(chǎn)品:Evaluation Kits 類型:Battery Management 工具用于評估:MAX17710GB 輸入電壓: 輸出電壓:1.8 V |
| HIP6028 | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:Advanced PWM and Dual Linear Power Control with Integrated ACPI Support Interface |
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