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參數(shù)資料
| 型號(hào)： | HIP6018EVAL1 |
| 廠商： | Intersil Corporation |
| 元件分類： | 基準(zhǔn)電壓源/電流源 |
| 英文描述： | Advanced PWM and Dual Linear Power Control |
| 中文描述： | 先進(jìn)的雙PWM和線性功率控制 |
| 文件頁(yè)數(shù)： | 5/14頁(yè) |
| 文件大?。?/td> | 133K |
| 代理商： | HIP6018EVAL1 |
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2-228
Under-Voltage Hysteresis
-
6
-
%
DRIVE3 Source Current
VIN2 - DRIVE3 > 0.6V
20
40
-
mA
PWM CONTROLLER ERROR AMPLIFIER
DC Gain
-
88
-
dB
Gain-Bandwidth Product
GBWP
-
15
-
MHz
Slew Rate
SR
COMP = 10pF
-
6
-
V/
μ
s
PWM CONTROLLER GATE DRIVER
Upper Drive Source
I
UGATE
VCC = 12V, V
UGATE1
(or V
GATE2
) = 6V
-
1
-
A
Upper Drive Sink
R
UGATE
V
UGATE1-PHASE1
= 1V
-
1.7
3.5
Lower Drive Source
I
LGATE
VCC = 12V, V
LGATE1
= 1V
-
1
-
A
Lower Drive Sink
R
LGATE
V
LGATE1
= 1V
-
1.4
3.0
PROTECTION
V
OUT1
Over-Voltage Trip
VSEN1 Rising
112
115
118
%
FAULT Sourcing Current
I
OVP
V
FAULT
= 10V
10
14
-
mA
OCSET1 Current Source
I
OCSET
V
OCSET
= 4.5V
DC
170
200
230
μ
A
Soft-Start Current
I
SS
-
11
-
μ
A
Chip Shutdown Soft-Start Threshold
-
-
1.0
V
POWER GOOD
V
OUT1
Upper Threshold
VSEN1 Rising
108
-
110
%
V
OUT1
Under Voltage
VSEN1 Rising
92
-
94
%
V
OUT1
Hysteresis (VSEN1 / DACOUT)
Upper/Lower Threshold
-
2
-
%
PGOOD Voltage Low
V
PGOOD
I
PGOOD
= -4mA
-
-
0.5
V
Electrical Specifications
Recommended Operating Conditions, Unless Otherwise Noted. Refer to Figures 1, 2 and 3
(Continued)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Typical Performance Curves
FIGURE 4. R
T
RESISTANCE vs FREQUENCY
FIGURE 5. BIAS SUPPLY CURRENT vs FREQUENCY
10
100
1000
SWITCHING FREQUENCY (kHz)
R
)
10
100
1000
R
T
PULLUP
TO +12V
R
T
PULLDOWN TO V
SS
100
200
300
400
500
600
700
800
900
1000
0
20
40
60
80
100
SWITCHING FREQUENCY (kHz)
I
C
C
GATE
= 660pF
C
UGATE1
= C
LGATE1
= C
GATE
V
VCC
= 12V, V
IN
= 5V
C
GATE
= 4800pF
C
GATE
= 3600pF
C
GATE
= 1500pF
HIP6018
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|---|---|
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