參數(shù)資料
型號(hào)： HIP1012ACB-T
廠商： HARRIS SEMICONDUCTOR
元件分類： 電源管理
英文描述： Dual Power Distribution Controller
中文描述： POWER SUPPLY SUPPORT CKT, PDSO14
文件頁數(shù)： 4/15頁
文件大?。?/td> 173K
代理商： HIP1012ACB-T
4
Absolute Maximum Ratings
T
A
= 25
o
C
V
DD
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3V to +13.2V
3/12VG, C
PUMP
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3V to 18.5V
3/12VISEN, 3/12VS . . . . . . . . . . . . . . . . . . . . . . . -5V to V
DD
+ 0.3V
5VISEN, 5VS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .-5V to 7.5V
PGOOD, R
ILIM
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3V to 7.5V
MODE/PWRON1, PWRON2, C
TIM
, 5VG . . . . .-0.3V to V
DD
+ 0.3V
ESD Classification . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2kV (Class 2)
Thermal Information
Operating Conditions
V
DD
Supply Voltage Range . . . . . . . . . . . . . . . . . . . +10.5V to +13.2
Temperature Range (T
A
) . . . . . . . . . . . . . . . . . . . . . . . .0
o
C to 70
o
C
Thermal Resistance (Typical, Note 1)
SOIC Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Maximum Junction Temperature (Plastic Package) . . . . . . . .150
o
C
Maximum Storage Temperature Range. . . . . . . . . . -65
o
C to 150
o
C
Maximum Lead Temperature (Soldering 10s) . . . . . . . . . . . . .300
o
C
(SOIC - Lead Tips Only)
θ
JA
(
o
C/W)
120
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES:
1.
θ
JA
is measured with the component mounted on an evaluation PC board in free air.
2. All voltages are relative to GND, unless otherwise specified.
Electrical Specifications
V
DD
= 12V, C
VG
= 0.01
μ
F, C
TIM
= 0.1
μ
F, R
SENSE
= 0.1
, C
BULK
= 220
μ
F, ESR = 0.5
, T
A
= T
J
= 0
o
C to 70
o
C,
Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
12V CONTROL SECTION
Current Limit Threshold Voltage
(Voltage Across Sense Resistor)
V
IL12V
V
IL12V
R
ILIM
=10k
R
ILIM
= 5k
HIP1012A only
92
47
100
53
108
59
mV
mV
3X Current Limit Threshold Voltage
(Voltage Across Sense Resistor)
3XV
iL12V
3XV
IL12V
R
ILIM
=10k
R
ILIM
= 5k
HIP1012A only
250
100
300
165
350
210
mV
mV
±
20% Current Limit Response Time
(Current within 20% of Regulated Value)
20%iLrt
200% Current Overload, R
ILIM
= 10k
,
R
SHORT
= 6.0
-
2
-
μ
s
±
10% Current Limit Response Time
(Current within 10% of Regulated Value)
10%iLrt
200% Current Overload, R
ILIM
= 10k
,
R
SHORT
= 6.0
-
4
-
μ
s
±
1% Current Limit Response Time
(Current within 1% of Regulated Value)
1%iLrt
200% Current Overload, R
ILIM
= 10k
,
R
SHORT
= 6.0
-
10
-
μ
s
Response Time To Dead Short
RT
SHORT
C
12VG
= 0.01
μ
F
-
500
1000
ns
Gate Turn-On Time
t
ON12V
C
12VG
= 0.01
μ
F
-
12
-
ms
Gate Turn-On Current
I
ON12V
C
12VG
= 0.01
μ
F
8
10
12
μ
A
3X Gate Discharge Current
3XdisI
12VG = 18V
0.5
0.75
-
A
12V Under Voltage Threshold
12V
VUV
10.5
10.8
11.0
V
Qpumped 12VG Voltage
V12VG
C
PUMP
= 0.1
μ
F
16.8
17.3
17.9
V
3.3V/5V CONTROL SECTION
Current Limit Threshold Voltage
(Voltage Across Sense Resistor)
V
IL5V
R
ILIM
=10k
R
ILIM
= 5k
HIP1012A only
92
47
100
53
108
59
mV
mV
3X Current Limit Threshold Voltage
(Voltage Across Sense Resistor)
3XV
IL5V
R
ILIM
=10k
R
ILIM
= 5k
HIP1012A only
250
100
300
155
350
210
mV
mV
±
20% Current Limit Response Time
(Current within 20% of regulated value)
200% Current Overload, R
ILIM
= 10k
,
R
SHORT
= 2.5
-
2
-
μ
s
±
10% Current Limit Response Time
(Current within 10% of Regulated Value)
200% Current Overload, R
ILIM
= 10k
,
R
SHORT
= 2.5
-
4
-
μ
s
±
1% Current Limit Response Time
(Current within 1% of Regulated Value)
200% Current Overload, R
ILIM
= 10k
,
R
SHORT
= 2.5
-
10
-
μ
s
Response Time To Dead Short
RT
SHORT
C
VG
= 0.01
μ
F
-
500
800
ns
HIP1012, HIP1012A
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