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參數(shù)資料
| 型號： | HGTP5N120CND |
| 廠商： | INTERSIL CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | 25A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode(25A, 1200V,NPT系列N溝道絕緣柵雙極型晶體管) |
| 中文描述： | 25 A, 1200 V, N-CHANNEL IGBT |
| 封裝： | TO-220AB ALTERNATE VERSION, 3 PIN |
| 文件頁數(shù)： | 6/7頁 |
| 文件大小： | 87K |
| 代理商： | HGTP5N120CND |
6
FIGURE 15. CAPACITANCE vs COLLECTOR TO EMITTER
VOLTAGE
FIGURE 16. COLLECTOR TO EMITTER ON-STATE VOLTAGE
FIGURE 17. NORMALIZED TRANSIENT THERMAL RESPONSE, JUNCTION TO CASE
FIGURE 18. DIODE FORWARD CURRENT vs FORWARD
VOLTAGE DROP
FIGURE 19. RECOVERY TIMES vs FORWARD CURRENT
Typical Performance Curves
Unless Otherwise Specified
(Continued)
C
RES
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
0
5
10
15
20
25
0
0.5
C
C
IES
1.0
1.5
2.0
C
OES
FREQUENCY = 1MHz
I
C
,
0
1
2
3
2.5
0
0.5
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
1.0
2.0
1.5
4
5
6
3.0
250
μ
s PULSE TEST
DUTY CYCLE < 0.5%, T
C
= 110
o
C
V
GE
= 10V
7
3.5
V
GE
= 15V
t
1
, RECTANGULAR PULSE DURATION (s)
Z
θ
J
,
10
-2
10
-1
10
0
10
-5
10
-3
10
-2
10
-1
10
0
10
-4
0.20
t
1
t
2
P
D
DUTY FACTOR, D = t
1
/ t
2
PEAK T
J
= (P
D
X Z
θ
JC
X R
θ
JC
) + T
C
SINGLE PULSE
0.10
0.50
0.05
0.02
0.01
V
EC
, FORWARD VOLTAGE (V)
0
1
2
3
4
6
1
I
E
,
10
100
5
7
8
25
o
C
150
o
C
-55
o
C
I
EC
, FORWARD CURRENT (A)
1
2
3
4
5
0
10
t
r
,
20
30
40
7
6
50
60
t
rr
t
a
t
b
T
C
= 25
o
C, dI
EC
/dt = 200A/
μ
s
HGTG5N120CND, HGTP5N120CND, HGT1S5N120CNDS
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| HGTP5N120CNS | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 25A I(C) | TO-263AB |
| HGTP5N120CNS9A | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 25A I(C) | TO-263AB |
| HGTP6N40E1D | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Harris Corporation 功能描述: |
| HGTP6N40EID | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Harris Corporation 功能描述: |
| HGTP7N60A4 | 功能描述:IGBT 晶體管 600V N-Channel IGBT SMPS Series RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
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