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參數(shù)資料
| 型號： | HGTP5N120CND |
| 廠商： | INTERSIL CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | 25A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode(25A, 1200V,NPT系列N溝道絕緣柵雙極型晶體管) |
| 中文描述： | 25 A, 1200 V, N-CHANNEL IGBT |
| 封裝： | TO-220AB ALTERNATE VERSION, 3 PIN |
| 文件頁數(shù)： | 3/7頁 |
| 文件大?。?/td> | 87K |
| 代理商： | HGTP5N120CND |
3
Current Turn-On Delay Time
t
d(ON)I
IGBT and Diode at T
J
= 150
o
C
I
CE
= 5.5A
V
CE
= 0.8 BV
CES
V
GE
= 15V
R
G
= 25
L = 5mH
Test Circuit (Figure 20)
-
20
25
ns
Current Rise Time
t
rI
-
12
16
ns
Current Turn-Off Delay Time
t
d(OFF)I
-
225
300
ns
Current Fall Time
t
fI
-
350
400
ns
Turn-On Energy
E
ON
-
1
1.2
mJ
Turn-Off Energy (Note 3)
E
OFF
-
1
1.1
mJ
Diode Forward Voltage
V
EC
I
EC
= 5.5A
-
2.4
3.3
V
Diode Reverse Recovery Time
t
rr
I
EC
= 5.5A, dI
EC
/dt = 200A/
μ
s
-
48
60
ns
I
EC
= 1A, dI
EC
/dt = 200A/
μ
s
-
30
40
ns
Thermal Resistance Junction To Case
R
θ
JC
IGBT
-
-
0.75
o
C/W
Diode
-
-
1.9
o
C/W
NOTE:
3. Turn-Off Energy Loss (E
OFF
) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending
at the point where the collector current equals zero (I
CE
= 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement
of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
(Continued)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Typical Performance Curves
Unless Otherwise Specified
FIGURE 1. DC COLLECTOR CURRENT vs CASE
TEMPERATURE
FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA
T
C
, CASE TEMPERATURE (
o
C)
I
C
,
50
5
0
20
10
15
V
GE
= 15V
25
75
100
125
150
25
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
1400
15
0
I
C
,
5
10
600
800
400
200
1000
1200
0
20
25
T
J
= 150
o
C, R
G
= 25
, V
GE
= 15V, L = 200
μ
H
30
35
HGTG5N120CND, HGTP5N120CND, HGT1S5N120CNDS
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| HGTP5N120CNS | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 25A I(C) | TO-263AB |
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