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參數(shù)資料
| 型號(hào)： | HGTG5N120CND |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | 25A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode(25A, 1200V,NPT系列N溝道絕緣柵雙極型晶體管) |
| 中文描述： | 5 A, 1200 V, N-CHANNEL IGBT, TO-247 |
| 文件頁數(shù)： | 4/7頁 |
| 文件大?。?/td> | 87K |
| 代理商： | HGTG5N120CND |
4
FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO
EMITTER CURRENT
FIGURE 4. SHORT CIRCUIT WITHSTAND TIME
FIGURE 5. COLLECTOR TO EMITTER ON-STATE VOLTAGE
FIGURE 6. COLLECTOR TO EMITTER ON-STATE VOLTAGE
FIGURE 7. TURN-ON ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
FIGURE 8. TURN-OFF ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
Typical Performance Curves
Unless Otherwise Specified
(Continued)
f
M
,
1
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
10
50
200
2
f
MAX1
= 0.05 / (t
d(OFF)I
+ t
d(ON)I
)
f
MAX2
= (P
D
- P
C
) / (E
ON
+ E
OFF
)
R
JC
= 0.75
o
C/W, SEE NOTES
P
C
= CONDUCTION DISSIPATION
(DUTY FACTOR = 50%)
T
J
= 150
o
C, R
G
= 25
, L = 5mH, V
CE
= 960V
T
C
75
o
C
75
o
C
V
GE
15V
12V
110
o
C
12V
15V
110
o
C
T
C
= 75
o
C, V
= 5V
IDEAL DIODE
3
5
10
100
20
V
GE
, GATE TO EMITTER VOLTAGE (V)
I
S
,
t
S
,
μ
s
10
11
12
13
14
15
10
15
20
25
30
30
40
50
60
t
SC
35
70
20
V
CE
= 840V, R
G
= 25
, T
J
= 125
o
C
I
SC
0
1
4
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
I
C
,
0
5
10
15
6
8
10
30
25
20
35
2
3
5
7
9
250
μ
s PULSE TEST
DUTY CYCLE < 0.5%, V
GE
= 12V
T
C
= -55
o
C
T
C
= 25
o
C
T
C
= 150
o
C
I
C
,
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
20
30
60
0
2
4
0
6
8
10
10
40
50
70
80
DUTY CYCLE < 0.5%, V
GE
= 15V
250
μ
s PULSE TEST
T
C
= -55
o
C
T
C
= 150
o
C
T
C
= 25
o
C
E
O
,
2500
1500
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
2000
1000
500
5
3
7
6
4
2
3000
8
9
10
0
T
J
= 25
o
C, V
GE
= 15V, V
GE
= 12V
T
J
= 150
o
C, V
GE
= 15V, V
GE
= 12V
R
G
= 25
, L = 5mH, V
CE
= 960V
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
E
O
,
μ
J
0
4
2
1
3
5
250
750
500
1000
1250
1500
9
6
8
7
10
R
G
= 25
, L = 5mH, V
CE
= 960V
T
J
= 150
o
C, V
GE
= 12V OR 15V
T
J
= 25
o
C, V
GE
= 12V OR 15V
1750
HGTG5N120CND, HGTP5N120CND, HGT1S5N120CNDS
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| HGTP5N120CND | 25A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode(25A, 1200V,NPT系列N溝道絕緣柵雙極型晶體管) |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HGTG7N60A4 | 功能描述:IGBT 晶體管 600V N-Channel IGBT SMPS Series RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| HGTG7N60A4D | 功能描述:IGBT 晶體管 600V N-Ch IGBT SMPS Series HF RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| HGTG7N60A4D | 制造商:Fairchild Semiconductor Corporation 功能描述:IGBT N TO-247 |
| HGTG7N60A4D_05 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode |
| HGTG7N60A4D_Q | 功能描述:IGBT 晶體管 600V N-Ch IGBT SMPS Series HF RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
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