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參數(shù)資料
| 型號： | HGT1S3N60C3DS |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | 6A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes |
| 中文描述： | 6 A, 600 V, N-CHANNEL IGBT, TO-263AB |
| 封裝： | TO-263AB, 3 PIN |
| 文件頁數(shù)： | 5/7頁 |
| 文件大?。?/td> | 273K |
| 代理商： | HGT1S3N60C3DS |
5
FIGURE 13. OPERATING FREQUENCY vs COLLECTOR TO
EMITTER CURRENT
FIGURE 14. MINIMUM SWITCHING SAFE OPERATING AREA
FIGURE 15. CAPACITANCE vs COLLECTOR TO EMITTER
VOLTAGE
FIGURE 16. GATE CHARGE WAVEFORMS
FIGURE 17. IGBT NORMALIZED TRANSIENT THERMAL IMPEDANCE, JUNCTION TO CASE
Typical Performance Curves
(Continued)
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
f
M
,
1
2
4
6
100
200
10
f
MAX2
= (P
D
- P
C
)/(E
ON
+ E
OFF
)
P
D
= ALLOWABLE DISSIPATION
P
C
= CONDUCTION DISSIPATION
(DUTY FACTOR = 50%)
R
θ
JC
= 3.75
o
C/W
f
MAX1
= 0.05/(t
D(OFF)I
+ t
D(ON)I
)
T
J
= 150
o
C, T
C
= 75
o
C
R
G
= 82
, L = 1mH
V
GE
= 10V
V
GE
= 15V
5
3
V
CE(PK)
, COLLECTOR TO EMITTER VOLTAGE (V)
I
C
,
0
100
200
300
400
500
600
0
2
4
6
8
T
J
= 150
o
C, V
GE
= 15V, R
G
= 82
, L = 1mH
10
12
14
16
18
20
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
0
5
10
15
20
25
0
100
200
300
400
500
C
C
IES
FREQUENCY = 1MHz
C
OES
C
RES
V
G
,
V
C
,
Q
G
, GATE CHARGE (nC)
0
240
120
360
480
600
15
12
9
6
3
0
2
4
6
8
10
12
14
0
V
CE
= 400V
V
CE
= 200V
V
CE
= 600V
I
G(REF)
= 1.060mA
R
L
= 200
T
C
= 25
o
C
t
1
, RECTANGULAR PULSE DURATION (s)
10
-5
10
-3
10
0
10
1
10
-4
10
-1
10
-2
10
0
Z
θ
J
,
10
-1
10
-2
DUTY FACTOR, D = t
1
/ t
2
PEAK T
J
= (P
D
X Z
θ
JC
X R
θ
JC
) + T
C
t
1
t
2
P
D
SINGLE PULSE
0.5
0.05
0.2
0.1
0.02
0.01
HGTP3N60C3D, HGT1S3N60C3DS
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HGTP3N60C3D | 6A, 600V, UFS Series N-Channel IGBTs(6A, 600V, UFS系列N溝道絕緣柵雙極型晶體管) |
| HGT1S7N60B3DS | 14A, 600V, UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode |
| HGT1S7N60B3DS | 14A, 600V, UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode |
| HGTD2N120CNS | 13A, 1200V, NPT Series N-Channel IGBT |
| HGTD2N120CNS | 13A, 1200V, NPT Series N-Channel IGBT |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HGT1S3N60C3DS9A | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 3A I(C) | TO-263AB |
| HGT1S5N120BNDS | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:21A, 1200V, NPT Series N-Channel IGBTs with Anti-Parallel Hyperfast Diodes |
| HGT1S5N120BNDS9A | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 10A I(C) | TO-263AB |
| HGT1S5N120BNS | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:21A, 1200V, NPT Series N-Channel IGBTs |
| HGT1S5N120BNS9A | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 10A I(C) | TO-263AB |
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